Dr. Guylhaine Clavel
I received my degree in chemistry in 2005 from the University of Montpellier II (France). In 2005, I joined the Martin Luther University, Halle-Wittenberg (Halle, Germany), as a PhD student. In 2006 I pursued my research at the Department of Chemistry and CICECO of the University of Aveiro (Portugal) and got my PhD in 2009. I have currently a postdoc position in the group of Dr. Nicola Pinna at the CICECO institute (Portugal). My research activity is focused on the development of non-aqueous sol-gel routes for the synthesis of metal oxide nanoparticles in solution and thin films deposition by ALD.
During my stay in Prof. Chabal’s group, I had the opportunity to use the extensive facilities available in the laboratory to investigate the reaction mechanism of new ALD deposition processes developed in Dr. Pinna’s group. Thanks to Karla Bernal Ramos (Ph. D. Student), we performed in-situ IR spectroscopy and established the reaction mechanisms taking place during the depositions of oxides occurring during metal alkoxide-acetic acid processes.
Paul Gevers
Hi, I am Paul Gevers. I am in my last year of Ph.D. and am here on an internship from the Eindhoven University of Technology,the Netherlands.[1] In Eindhoven I work on surface and interface related processes during dry etching of semiconductors, studied in a beam experiment.[2] During my stayin Yves group I will have a change to learn new setups and diagnostics, such as infrared spectroscopy, and see what they know here about the processes involved in etching with XeF2, which I also use in Holland.[3] Although I am the first foreign visitor of this group in Dallas, my colleague Erik Langereis also visited this group when it was still at Rutgers. [4]
Chenglong Jiang
My name is Chenglong Jiang. I am a visiting graduate student here and in my first year of master. I’m here doing an internship from Stevens Institute of Technology in New Jersey. My research focuses on the of use Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) to characterize the chemical bonding in a variety of oxides. I also take part in the project which is doing research on the nature of graphene. From these researches, I learned how to use FTIR and XPS to analyze materials and how the UHV instruments work. It’s a great experience to do an internship in this group.
Wayne Morrow
I am Wayne Morrow, a visiting PhD candidate in Materials Science from the University of Florida. My research is based on graphene and its thermal and barrier properties. Graphene is a wondrous material with theoretical properties that are unmatched in the materials world. Our aim is to use graphene to solve real world reliability problems in the compound semiconductors.
Previously I have studied carbon based materials, specifically DLC for use in field emission devices at Arizona State University and Motorola’s research labs. After a decade off from academia and starting a semiconductor equipment company, the quick pace of new exciting materials has led me back to the university in pursue a doctorate.
Marine Petrantoni
Marine PETRANTONI received her engineer degree from the Engineering School “Polytech’Grenoble”, part of the Joseph Fourier University of Grenoble (France), in 2006. She was in the « MATERIALS » Department.
In 2010, she received her PhD from the University “Paul Sabatier” of Toulouse (France). She did her PhD at the Laboratory for Analysis and Architecture of the Systems (LAAS laboratory – Toulouse, France), in the « MEMS » Department. It is a French National Center for Scientific Research (CNRS). Her PhD topic was about the Integration of nano-energetic materials in microsystems via microelectronic technologies.
Currently, she works at Etienne Lacroix, this company provides a broad range of pyrotechnic components and systems for military and civil.
Fabrice Severac
Fabrice SEVERAC was born in Millau (France) in 1980. He obtained a Master degree in Physics and Material Sciences with a major in Semiconductor Devices and Material Physics in 2005 at the University of Montpellier II. He obtained in 2009 the Ph. D. degree in Nanophysics at the LAAS/CNRS laboratory in Toulouse within the framework of ATOMICS european project (Advanced Front-End Technology Modeling for Ultimate Integrated Circuits), he studied the impact of cristal defects from ion implantation of high boron concentration on electrical parameters (mobility, activation) of ultra-shallow junctions. From 2009, his research work concerns DNA controlled assembly/integration of metal and metal oxide nanoparticles for energetic applications.
F. Severac, et al. “High Energy Al/CuO nanocomposites obtained by DNA-directed assembly”, Adv. Funct. Mater., (2011), 10.1002/adfm.201100763.
Q. He, F. Severac, et al., Directed assembly of nanoparticles along predictable large-scale patterns using micromolded hydrogels, Langmuir, 27 (2011), pp. 6598-605.
F. Severac, et al., Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions, Journal of Applied Physics, 107 (2010), pp. 123711-5.
F. Severac, et al., Impact of Boron-Interstitial Clusters on Hall scattering factor in high dose boron-implanted ultra-shallow junctions., Journal of Applied Physics, 105 (2009), pp. 043711-6.
F. Severac, et al., Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements, Materials Science and Engineering B, 154-155 (2008), pp. 225-228.
W. Lerch, S. Paul, J. Niess, S. McCoy, J. Gelpey, F. Cristiano, F. Severac, et al., Advanced activation using various thermal budget regimes such as flash, multiple flashes and flash spike annealing, Materials Science and Engineering B, 154-155 (2008), pp. 3-13.
C. Steen, A. Martinez-Limia, P. Pichler, H. Ryssel, S. Paul, W. Lerch, L. Pei, G. Duscher, F. Severac, et al., Distribution and segregation of arsenic at the SiO2/Si interface, Journal of Applied Physics, 104 (2008), pp. 023518-11.
L. Pei, G. Duscher, C. Steen, P. Pichler, H. Ryssel, E. Napolitani, D. De Salvador, A. M. Piro, A. Terrasi, F. Severac, et al., Detailed arsenic concentration profiles at Si/SiO2 interfaces, Journal of Applied Physics, 104 (2008), pp. 043507-11.
S. Paul, W. Lerch, J. Chan, S. McCoy, J. Gelpey, F. Cristiano, F. Severac, et al., Optimum activation and diffusion with a combination of spike and flash annealing, J. Vac. Sci. Technol. B, 26 (2008), pp. 293-297.