Previous Publications

301. Attachment Of Streptavidin-Biotin On 3-Aminopropyltriethoxysilane (APTES) Modified Porous Silicon Surfaces, S. Singh, N. Lapin, P. K. Singh, M. A. Khan, and Y. J. Chabal, AIP Conference Proceedings 1147 (Transport and Optical Properties of Nanomaterials), 443 (2009).

300. Copper-metal deposition on self assembled monolayer for making top contacts in molecular electronic devices, O. Seitz, M. Dai, F. S. Aguirre-Tostado, R. M. Wallace, and Y. J. Chabal, Journal of the American Chemical Society 131 (50), 18159 (2009).

299. In-situ studies of high-k dielectrics for graphene-based devices, A. Pirkle, Y. J. Chabal, L. Colombo, and R. M. Wallace, Graphene and Emerging Materials for Post-Cmos Applications 19 (5), 215 (2009).

298. Atomic layer deposition of ruthenium films on hydrogen terminated silicon, S. K. Park, K. Roodenko, Y. J. Chabal, L. Wielunski, R. Kanjolia, J. Anthis, R. Odedra, and N. Boag, Materials Research Society Symposium Proceedings 1156 (Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics), 1156 D04 02 (2009).

297. Mechanisms of ion-induced GaN thin layer splitting, O. Moutanabbir, Y. J. Chabal, M. Chicoine, S. Christiansen, R. Krause-Rehberg, F. Schiettekatte, R. Scholz, O. Seitz, S. Senz, F. Susskraut, and U. Gosele, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 267 (8-9), 1264 (2009).

296. Atomic layer deposition of aluminum oxide on carboxylic acid-terminated self-assembled monolayers, M. Li, M. Dai, and Y. J. Chabal, Langmuir 25 (4), 1911 (2009).

295. Materials science of graphene for novel device applications, G. Lee, C. Gong, A. Pirkle, A. Venugopal, B. Lee, S. Park, L. Goux, M. Acik, R. Guzman, Y. Chabal, J. Kim, E. M. Vogel, R. M. Wallace, M. J. Kim, L. Colombo, and K. Cho, Graphene and Emerging Materials for Post-Cmos Applications 19 (5), 185 (2009).

294. Atomic-layer-deposited Al2O3 as gate dielectrics for graphene-based devices, B. Lee, G. Mordi, T. J. Park, L. Goux, Y. J. Chabal, K. J. Cho, E. M. Vogel, M. J. Kim, L. Colombo, R. M. Wallace, and J. Kim, Graphene and Emerging Materials for Post-Cmos Applications 19 (5), 225 (2009).

293. Infrared characterization of biotinylated silicon oxide surfaces, surface stability, and specific attachment of streptavidin, N. A. Lapin and Y. J. Chabal, Journal of Physical Chemistry B 113 (25), 8776 (2009).

292. RPM3: A multifunctional microporous MOF with recyclable framework and high H2 binding energy, A. J. Lan, K. H. Li, H. H. Wu, L. Z. Kong, N. Nijem, D. H. Olson, T. J. Emge, Y. J. Chabal, D. C. Langreth, M. C. Hong, and J. Li, Inorganic Chemistry 48 (15), 7165 (2009).

291. In situ infrared characterization during atomic layer deposition of lanthanum oxide, J. Kwon, M. Dai, M. D. Halls, E. Langereis, Y. J. Chabal, and R. G. Gordon, Journal of Physical Chemistry C 113 (2), 654 (2009).

290. Alcohol washing as a way to stabilize the anatase phase of nanostructured titania through controlling particle packing, K. N. P. Kumar, H. Izutsu, D. J. Fray, Y. Chabal, and T. Okubo, Journal of Materials Science 44 (21), 5944 (2009).

289. Theoretical and experimental analysis of H2 binding in a prototypical metal-organic framework material, L. Z. Kong, V. R. Cooper, N. Nijem, K. H. Li, J. Li, Y. J. Chabal, and D. C. Langreth, Physical Review B 79 (8), 081407 (2009).

288. Fundamental steps towards interface amorphization during silicon oxidation: Density functional theory calculations, A. Hemeryck, A. Esteve, N. Richard, M. D. Rouhani, and Y. J. Chabal, Physical Review B 79 (3), 035317 (2009).

287. M. M. Frank and Y. J. Chabal, Surface and interface chemistry for gate stacks on silicon in Into the Nano Era, edited by H. R. Huff (2009), 113. 286. The structure and vibrational spectrum of the Si(111)-H/Cl surface, G. A. Ferguson, S. Rivillon, Y. Chabal, and K. Raghavachari, Journal of Physical Chemistry C 113 (52), 21713 (2009).

285. Chemical properties of oxidized silicon carbide surfaces upon etching in hydrofluoric acid, S. Dhar, O. Seitz, M. D. Halls, S. Choi, Y. J. Chabal, and L. C. Feldman, Journal of the American Chemical Society 131 (46), 16808 (2009).

284. Nitrogen interaction with hydrogen-terminated silicon surfaces at the atomic scale, M. Dai, Y. Wang, J. Kwon, M. D. Halls, and Y. J. Chabal, Nature Materials 8 (10), 825 (2009).

283. FTIR study of copper agglomeration during atomic layer deposition of copper, M. Dai, J. Kwon, Y. J. Chabal, M. D. Halls, and R. G. Gordon, Materials Research Society Symposium Proceedings 1155 (CMOS Gate-Stack Scaling), 1155 C11 06 (2009).

2008 282. Genipin-induced changes in collagen gels: Correlation of mechanical properties to fluorescence, H. G. Sundararaghavan, G. A. Monteiro, N. A. Lapin, Y. J. Chabal, J. R. Miksan, and D. I. Shreiber, Journal of Biomedical Materials Research Part A 87A (2), 308 (2008).

281. Testing the effect of surface coatings on alkali atom polarization lifetimes, S. J. Seltzer, D. M. Rampulla, S. Rivillon-Amy, Y. J. Chabal, S. L. Bernasek, and M. V. Romalis, Journal of Applied Physics 104 (10), 103116 (2008).

280. Formation of periodic nanostructure network through substrate-mediated assembly, K. Prabhakaran, J. Kurian, K. N. P. Kumar, and Y. J. Chabal, Applied Surface Science 255 (5), 2063 (2008).

279. Nanoscale actuation of electrokinetic flows on thermoreversible surfaces, G. Paumier, J. Sudor, A. M. Gue, F. Vinet, M. Li, Y. J. Chabal, A. Esteve, and M. Djafari-Rouhani, Electrophoresis 29 (6), 1245 (2008).

278. Attachment of 3-(Aminopropyl)triethoxysilane on silicon oxide surfaces: dependence on solution temperature, R. M. Pasternack, S. R. Amy, and Y. J. Chabal, Langmuir 24 (22), 12963 (2008).

277. Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors, H. J. Na, J. C. Lee, D. Heh, P. Sivasubramani, P. D. Kirsch, J. W. Oh, P. Majhi, S. Rivillon, Y. J. Chabal, B. H. Lee, and R. Choi, Applied Physics Letters 93 (19), 192115 (2008).

276. Investigation of the chemical purity of silicon surfaces reacted with liquid methanol, D. J. Michalak, S. R. Amy, A. Esteve, and Y. J. Chabal, Journal of Physical Chemistry C 112 (31), 11907 (2008).

275. Detection of a Formate Surface Intermediate in the Atomic Layer Deposition of High-κ Dielectrics Using Ozone, J. Kwon, M. Dai, M. D. Halls, and Y. J. Chabal, Chemistry of Materials 20 (10), 3248 (2008).

274. UV-induced immobilization of tethered zirconocenes on H-terminated silicon surfaces, H. Gruber-Woelfler, S. R. Amy, Y. J. Chabal, G. Schitter, E. Polo, M. Ringwald, and J. G. Khinast, Chemical Communications (11), 1329 (2008).

273. Adsorbate-surface phonon interactions in deuterium-passivated si(111)-(1 x 1), G. A. Ferguson, K. Raghavachari, D. J. Michalak, and Y. Chabal, Journal of Physical Chemistry C 112 (4), 1034 (2008).

272. Formation and bonding of alane clusters on Al(111) surfaces studied by infrared absorption spectroscopy and theoretical modeling, S. Chaudhuri, S. Rangan, J. F. Veyan, J. T. Muckerman, and Y. J. Chabal, Journal of the American Chemical Society 130 (32), 10576 (2008).

2007 271. Role of hydrogen in hydrogen-induced layer exfoliation of germanium, J. M. Zahler, A. F. I. Morral, M. J. Griggs, H. A. Atwater, and Y. J. Chabal, Physical Review B 75 (3) (2007).

270. Characterization of ultra-thin hafnium oxide films grown on silicon by atomic layer deposition using tetrakis(ethylmethyl-amino) hafnium and water precursors, Y. Wang, M. T. Ho, L. V. Goncharova, L. S. Wielunski, S. Rivillon-Amy, Y. J. Chabal, T. Gustafsson, N. Moumen, and M. Boleslawski, Chemistry of Materials 19 (13), 3127 (2007).

269. Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor, Y. Wang, M. Dai, M. T. Ho, L. S. Wielunski, and Y. J. Chabal, Applied Physics Letters 90 (2) (2007).

268. Molecular ordering in bis(phenylenyl)bithiophenes, M. A. Stokes, R. Kortan, S. R. Amy, H. E. Katz, Y. J. Chabal, C. Kloc, and T. Siegrist, Journal of Materials Chemistry 17 (32), 3427 (2007).

267. Difficulty for oxygen to incorporate into the silicon network during initial O2 oxidation of Si(100)-(2×1), A. Hemeryck, A. J. Mayne, N. Richard, A. Esteve, Y. J. Chabal, M. D. Rouhani, G. Dujardin, and G. Comtet, Journal of Chemical Physics 126 (11), 114707 (2007).

266. Using Multi Scale Modelling as a Characterization Tool to Complete Experimental Data, A. Hemeryck, A. Esteve, M. D. Rouhani, A. J. Mayne, G. Dujardin, G. Comtet, N. Richard, and Y. J. Chabal, Materials Research Society Symposium Proceedings 967E (Advances in In Situ Characterization of Film Growth and Interface Processes), 0967 U08 02 (2007).

265. Hydrogen barrier layer against silicon oxidation during atomic layer deposition of Al2O3 and HfO2, M. M. Frank, Y. Wang, M. T. Ho, R. T. Brewer, N. Moumen, and Y. J. Chabal, Journal of the Electrochemical Society 154, G44 (2007).

264. In-situ FTIR study of atomic layer deposition (ALD) of copper metal films, M. Dai, J. Kwon, E. Langereis, L. Wielunski, Y. J. Chabal, Z. Li, and R. G. Gordon, ECS Transactions 11 (7, Atomic Layer Deposition Applications 3), 91 (2007).

263. In-situ infrared absorption monitoring of atomic layer deposition of metal oxides on functionalized Si and Ge surfaces, M. Dai, J. Kwon, M.-T. Ho, Y. Wang, S. Rivillon, M. Li, Y. J. Chabal, and M. Boleslawski, Materials Research Society Symposium Proceedings 996E (Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies), 0996 H07 04 (2007).

262. Y. J. Chabal, G. S. Higashi, and R. J. Small, Surface chemical composition and morphology in Handbook of Silicon Wafer Cleaning Technology, edited by K.A. Reinhardt and W. Kern (William Andrew, Norwich, 2007).

261. Investigation of the reactions during alkylation of chlorine-terminated silicon (111) surfaces, S. R. Amy, D. J. Michalak, Y. J. Chabal, L. Wielunski, P. T. Hurley, and N. S. Lewis, Journal of Physical Chemistry C 111 (35), 13053 (2007).

260. S. R. Amy and Y. J. Chabal, Passivation and characterization of germanium surfaces in Advanced Gate Stacks for High-Mobility Semiconductors (2007), 73. 2006 259. Transmission infrared spectroscopy of methyl- and ethyl-terminated silicon(111) surfaces, L. J. Webb, S. Rivillon, D. J. Michalak, Y. J. Chabal, and N. S. Lewis, Journal of Physical Chemistry B 110 (14), 7349 (2006).

258. In situ infrared absorption spectroscopy for thin film growth by atomic layer deposition – art. no. 63250G, Y. Wang, M. Dai, S. Rivillon, M. T. Ho, and Y. J. Chabal, Physical Chemistry of Interfaces and Nanomaterials V 6325, G3250 (2006).

257. Hydrogen nanochemistry achieving clean and pre-oxidized silicon carbide surface metallization, P. Soukiassian, M. G. Silly, C. Radtke, H. Enriquez, M. D’Angelo, V. Derycke, V. Y. Aristov, F. Amy, Y. J. Chabal, P. Moras, M. Pedio, S. Gardonio, C. Ottaviani, and P. Perfetti, Silicon Carbide and Related Materials 2005, Pts 1 and 2 527-529, 667 (2006).

256. Preparation of tuneable biofunctionalized surfaces for sensing and biomedical applications, G. Schitter, H. Woelfler, S. Rivillon, Y. Chabal, and J. Khinast, AIChE Annual Meeting, Conference Proceedings, San Francisco, CA, United States, Nov. 12-17, 2006, 322d/1 (2006).

255. Wet chemical cleaning of germanium surfaces for growth of high-k dielectrics, S. Rivillon-Amy, Y. J. Chabal, F. Amy, A. Kahn, C. Krugg, and P. Kirsch, MRS proc. 917E, E01 (2006).

254. Alkylation of silicon(111) surfaces, S. Rivillon and Y. J. Chabal, Journal De Physique Iv 132, 195 (2006).

253. Infrared spectroscopic investigation of the reaction of hydrogen-terminated, (111)-oriented, silicon surfaces with liquid methanol, D. J. Michalak, S. Rivillon, Y. J. Chabal, A. Esteve, and N. S. Lewis, Journal of Physical Chemistry B 110 (41), 20426 (2006).

252. Thermal stability of amorphous LaScO3 films on silicon, L. F. Edge, D. G. Schlom, S. Rivillon, Y. J. Chabal, M. P. Agustin, S. Stemmer, T. Lee, M. J. Kim, H. S. Craft, J. P. Maria, M. E. Hawley, B. Hollander, J. Schubert, and K. Eisenbeiser, Applied Physics Letters 89 (6), 062902 (2006).

2005 251. Ion backscattering study of ultra-thin oxides: Al2O3 and AlHfOx films on Si, L. S. Wielunski, Y. Chabal, M. Paunescu, M. T. Ho, R. Brewer, and J. E. Reyes, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 241 (1-4), 377 (2005).

250. Structural characterization of a functionalized organic semiconductor, M. Stickle, R. Kortan, S. Rivillon, Z. Bao, H. Katz, and Y. Chabal, Materials Research Society Symposium Proceedings 871E (Organic Thin-Film Electronics), 3 16 (2005).

249. Chlorination of hydrogen-terminated silicon(111) surfaces, S. Rivillon, Y. J. Chabal, L. J. Webb, D. J. Michalak, N. S. Lewis, M. D. Halls, and K. Raghavachari, Journal of Vacuum Science & Technology A 23 (4), 1100 (2005).

248. Hydrogen passivation of germanium (100) surface using wet chemical preparation, S. Rivillon, Y. J. Chabal, F. Amy, and A. Kahn, Applied Physics Letters 87 (25), 253101 (2005).

247. Water reaction with chlorine-terminated silicon (111) and (100) surfaces, S. Rivillon, R. T. Brewer, and Y. J. Chabal, Applied Physics Letters 87 (17), 173118 (2005).

246. Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP, A. F. Morral, J. M. Zahler, M. J. Griggs, H. A. Atwater, and Y. J. Chabal, Physical Review B 72 (8), 085219 (2005).

245. Controlled silicon surface functionalization by alkene hydrosilylation, A. Langner, A. Panarello, S. Rivillon, O. Vassylyev, J. G. Khinast, and Y. J. Chabal, Journal of the American Chemical Society 127 (37), 12798 (2005).

244. In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition, M. T. Ho, Y. Wang, R. T. Brewer, L. S. Wielunski, Y. J. Chabal, N. Moumen, and M. Boleslawski, Applied Physics Letters 87 (13), 133103 (2005).

243. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition, M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Muller, Applied Physics Letters 86 (15), 152904 (2005).

242. High-k gate dielectrics on silicon and germanium: Impact of surface preparation, M. M. Frank, H. Shang, S. Rivillon, F. Amy, C. L. Hsueh, V. Paruchuri, R. T. Mo, M. Copel, E. P. Gusev, M. A. Gribelyuk, and Y. J. Chabal, Solid State Phenomena Ultra Clean Processing of Silicon Surfaces Vii 103-104, 3 (2005).

241. M. M. Frank and Y. J. Chabal, Mechanistics studies of dielectric growth on silicon in Materials fundamental of gate dielectrics, edited by A. A. Demkov and A. Navrotsky (Kluwer Academic Publisher, 2005), 367. 240. Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP, A. Fontcuberta i Morral, J. M. Zahler, M. J. Griggs, H. A. Atwater, and Y. J. Chabal, Physical Review B: Condensed Matter and Materials Physics 72 (8), 085219/1 (2005).

239. Silicon surface and interface issues for nanoelectronics, Y. Chabal and L. C. Feldman, Interface 14 (1), 31 (2005).

2004 238. Gas phase chlorination of hydrogen-passivated silicon surfaces, S. Rivillon, F. Amy, Y. J. Chabal, and M. M. Frank, Applied Physics Letters 85 (13), 2583 (2004).

237. Infrared spectroscopic analysis of an ordered Si/SiO2 interface, K. T. Queeney, N. Herbots, J. M. Shaw, V. Atluri, and Y. J. Chabal, Applied Physics Letters 84 (4), 493 (2004).

236. Wet chemical cleaning of plasma oxide grown on heated (001)InP surfaces, B. Lita, O. Pluchery, R. L. Opila, Y. J. Chabal, G. Bunea, J. P. Holman, and E. J. Bekos, Journal of Vacuum Science & Technology B 22 (4), 1885 (2004).

235. Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects, M. M. Frank, S. Sayan, S. Dormann, T. J. Emge, L. S. Wielunski, E. Garfunkel, and Y. J. Chabal, Materials Science and Engineering B-Solid State Materials for Advanced Technology 109 (1-3), 6 (2004).

234. Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon, L. F. Edge, D. G. Schlom, R. T. Brewer, Y. J. Chabal, J. R. Williams, S. A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Hollander, and J. Schubert, Applied Physics Letters 84 (23), 4629 (2004).

233. Metallic contact formation for molecular electronics: interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono- and dithiols, B. de Boer, M. M. Frank, Y. J. Chabal, W. R. Jiang, E. Garfunkel, and Z. Bao, Langmuir 20 (5), 1539 (2004).

232. Ammonia pretreatment for high-k dielectric growth on silicon, R. T. Brewer, M. T. Ho, K. Z. Zhang, L. V. Goncharova, D. G. Starodub, T. Gustafsson, Y. J. Chabal, and N. Moumen, Applied Physics Letters 85 (17), 3830 (2004).

2003 231. The microscopic origin of optical phonon evolution during water oxidation of Si(100), K. T. Queeney, M. K. Weldon, Y. J. Chabal, and K. Raghavachari, Journal of Chemical Physics 119 (4), 2307 (2003).

230. Wet chemical cleaning of InP surfaces investigated by in situ and ex situ infrared spectroscopy, O. Pluchery, Y. J. Chabal, and R. L. Opila, Journal of Applied Physics 94 (4), 2707 (2003).

229. Electrical and structural characterization of the interface of wafer bonded InP/Si, A. F. I. Morrall, J. M. Zahler, H. A. Atwater, M. M. Frank, Y. J. Chabal, P. Ahrenkiel, and M. Wanlass, Integration of Heterogeneous Thin-Film Materials and Devices 768, 27 (2003).

228. Advances in high-k gate dielectrics for Si and III-V semiconductors, J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, and T. Gustafsson, Journal of Crystal Growth 251 (1-4), 645 (2003).

227. Structural and electrical characterization of organic monolayers on surfaces, W. Jiang, O. Celik, N. Zhitenev, Z. Bao, B. de Boer, J. Zaumseil, Y. J. Chabal, M. M. Frank, and E. Garfunkel, Polymer preprints 44, 372 (2003).

226. Atomic layer deposition of Al2O3 on H-passivated Si: Al(CH3)2OH surface reactions with H/Si(100)-2X1, M. D. Halls, K. Raghavachari, M. M. Frank, and Y. J. Chabal, Physical Review B 68 (16), 161302 (2003).

225. Self-assembled monolayers of conjugated thiols studied by infrared spectroscopy: structure and metal electrode deposition, M. M. Frank, B. de Boer, Y. J. Chabal, and Z. Bao, Polymer preprints 44, 383 (2003).

224. Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides, M. M. Frank, Y. J. Chabal, and G. D. Wilk, Applied Physics Letters 82 (26), 4758 (2003).

223. In situ spectroscopic approach to atomic layer deposition, M. M. Frank, Y. J. Chabal, and G. D. Wilk, Novel Materials and Processes for Advanced Cmos 745, 41 (2003).

222. Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon, M. M. Frank, Y. J. Chabal, M. L. Green, A. Delabie, B. Brijs, G. D. Wilk, M. Y. Ho, E. B. O. da Rosa, I. J. R. Baumvol, and F. C. Stedile, Applied Physics Letters 83 (4), 740 (2003).

221. Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization, V. Derycke, P. G. Soukiassian, F. Amy, Y. J. Chabal, M. D. D’Angelo, H. B. Enriquez, and M. G. Silly, Nature Materials 2, 253 (2003).

220. Synthesis and characterization of conjugated mono- and dithiol oligomers and characterization of their self-assembled monolayers, B. de Boer, H. Meng, D. F. Perepichka, J. Zheng, M. M. Frank, Y. J. Chabal, and Z. N. Bao, Langmuir 19 (10), 4272 (2003).

219. Interaction of H, O2, and H2O with 3C-SiC surfaces, F. Amy and Y. J. Chabal, Journal of Chemical Physics 119 (12), 6201 (2003).

2002 218. The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor, M. K. Weldon, K. T. Queeney, J. Eng, K. Raghavachari, and Y. J. Chabal, Surface Science 500 (1-3), 859 (2002).

217. Vibrational study of indium phosphide oxides, O. Pluchery, J. Eng, R. L. Opila, and Y. J. Chabal, Surface Science 502, 75 (2002).

216. Morphology, conduction and interfacial characteristics of ultrathin (tequ=1.0nm) gate dielectrics: A study of critical integration issues for high-k dielectrics, J. Kwo, B. Busch, D. A. Muller, M. Hong, Y. J. Chabal, L. Manchanda, A. R. Kortan, J. P. Mannaerts, T. Boone, W. H. Schulte, E. Garfunkel, and T. Gustafsson, IEDM proceedings, 35 (2002).

215. In situ vibrational study of SiO2/liquid interfaces, H. Fukidome, O. Pluchery, K. T. Queeney, Y. Caudano, K. Raghavachari, M. K. Weldon, E. E. Chaban, S. B. Christman, H. Kobayashi, and Y. J. Chabal, Surface Science 502, 498 (2002).

214. Silanone (Si = O) on Si(100): intermediate for initial silicon oxidation, Y. J. Chabal, K. Raghavachari, X. Zhang, and E. Garfunkel, Physical Review B 66 (16), 161315 (2002).

213. Applications of infrared absorption spectroscopy to the microelectronics industry, Y. J. Chabal and K. Raghavachari, Surface Science 502, 41 (2002).

212. Y. J. Chabal, Internal transmission spectroscopy in Handbook of Vibrational Spectroscopy, edited by J. M. Chalmers and P.R. Griffiths (John Wiley & sons, 2002), 1117. 211. Investigation of the bending vibrations of vicinal H/Si(111) surfaces by infrared spectroscopy, Y. Caudano, P. A. Thiry, and Y. J. Chabal, Surface Science 502, 91 (2002).

210. Materials characterization of alternative gate dielectrics, B. W. Busch, O. Pluchery, Y. J. Chabal, D. A. Muller, R. L. Opila, J. R. Kwo, and E. Garfunkel, Mrs Bulletin 27 (3), 206 (2002).

2001 209. Stability of HF-etched Si(100) surfaces in oxygen ambient, X. Zhang, E. Garfunkel, Y. J. Chabal, S. B. Christman, and E. E. Chaban, Applied Physics Letters 79 (24), 4051 (2001).

208. Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces, X. Zhang, Y. J. Chabal, S. B. Christman, E. E. Chaban, and E. Garfunkel, Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 19 (4), 1725 (2001).

207. In-situ FTIR studies of reactions at the silicon/liquid interface: Wet chemical etching of ultrathin SiO2 on Si(100), K. T. Queeney, H. Fukidome, E. E. Chaban, and Y. J. Chabal, Journal of Physical Chemistry B 105 (18), 3903 (2001).

206. Role of interdimer interactions in NH3 dissociation on Si(100)-(2 x 1), K. T. Queeney, Y. J. Chabal, and K. Raghavachari, Physical Review Letters 86 (6), 1046 (2001).

205. Properties of high-k gate dielectrics Gd2O3 and Y2O3 for Si, J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay, J. P. Mannaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergnt, and J. M. Rosamilia, Journal of Applied Physics 89 (7), 3920 (2001).

204. Silicon surfaces and formation of interfaces: Basic science in the industrial world, D. Jarek, M. Hans-Joachim, and J. C. Yves, Physics Today 54 (10), 76 (2001).

203. Water-saturated Si(100)-(2×1): Kinetic Monte Carlo simulations of thermal oxygen incorporation, A. Esteve, Y. J. Chabal, K. Raghavachari, M. K. Weldon, K. T. Queeney, and M. D. Rouhani, Journal of Applied Physics 90 (12), 6000 (2001).

202. Y. J. Chabal, M. K. Weldon, K. T. Queeney, and A. Estève, Vibrational studies of ultra-thin oxides and initial silicon oxidation in Fundamental Aspects of Silicon Oxidation, edited by Y. J. Chabal (Springer, Berlin Heidelberg New York, 2001), 143. 201. Y. J. Chabal, M. K. Weldon, and K. T. Queeney, Ultra thin oxides and initial silicon oxidation in Fundamental aspects of silicon oxidation, edited by Y. J. Chabal (Springer, Berlin, Heidelberg, 2001), 143. 200. Atomic scale oxidation of a complex system: O2/?-SiC(0001)-(3×3), F. Amy, H. Enriquez, P. Soukiassian, P. F. Storino, Y. J. Chabal, A. J. Mayne, G. Dujardin, Y. K. Hwu, and C. Brylinski, Physical Review Letters 86 (19), 4342 (2001).

2000 199. Thermal oxidation of silicon with hydrogen and oxygen for gate oxide application in integrated circuit devices, E. Yang, Y. Ma, J. Eng, R. L. Opila Jr, and Y. J. Chabal, Proc. Electrochem. Soc. 585, M3 (2000).

198. Si-H bending modes as a probe of local chemical structure: Thermal and chemical routes to decomposition of H2O on Si(100)-(2×1), M. K. Weldon, K. T. Queeney, A. B. Gurevich, B. B. Stefanov, Y. J. Chabal, and K. Raghavachari, Journal of Chemical Physics 113 (6), 2440 (2000).

197. Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon, K. T. Queeney, M. K. Weldon, J. P. Chang, Y. J. Chabal, A. B. Gurevich, J. Sapjeta, and R. L. Opila, Journal of Applied Physics 87 (3), 1322 (2000).

196. High performance, highly reliable gate oxide formed with rapid thermal oxidation in-situ steam generation (ISSG) technique, Y. Ma, Y. Chen, M. Brown, F. Li, J. Eng Jr., R. L. Opila, Y. J. Chabal, B. J. Sapjeta, D. Muller, G. Xing, T. Trowbridge, M. Khau, and N. Tam, Proc. Electrochemical society “Rapid Thermal and other short-time processing technologies II 2000-9, 179 (2000).

195. High epsilon gate dielectrics Gd2O3 and Y2O3 for silicon, J. Kwo, M. Hong, A. R. Kortan, K. T. Queeney, Y. J. Chabal, J. P. Mannaerts, T. Boone, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia, Applied Physics Letters 77 (1), 130 (2000).

194. The evolution of chemical oxides into ultrathin oxides: a spectroscopic characterization, J. Eng, Jr., R. L. Opila, J. M. Rosamilia, B. J. Sapjeta, Y. J. Chabal, T. Boone, R. Masaitis, T. Sorsch, and M. L. Green, Diffusion and Defect Data–Solid State Data, Pt. B: Solid State Phenomena 76-77 (Ultra Clean Processing of Silicon Surfaces 2000), 145 (2000).

193. Mechanistic studies of wafer bonding and thin silicon film exfoliation, Y. J. Chabal, E. D. Isaacs, and M. K. Weldon, MRS Symp. Proc. 587, O4.4.1 (2000).

1999 192. Mechanistic studies of silicon oxidation, M. K. Weldon, K. T. Queeney, Y. J. Chabal, B. B. Stefanov, and K. Raghavachari, Journal of Vacuum Science & Technology B 17 (4), 1795 (1999).

191. FT-IR studies of elementary processes in silicon oxidation, M. K. Weldon, K. T. Queeney, and Y. J. Chabal, Proc. 12th Int. Conf. on Fourier Transform Spectroscopy, 153 (1999).

190. Hydrogen-induced exfoliation of crystalline silicon, M. K. Weldon and Y. J. Chabal, EMIS Datareviews Series 20 (Properties of Crystalline Silicon), 942 (1999).

189. Physics and chemistry of silicon wafer bonding, M. K. Weldon and Y. J. Chabal, EMIS Datareviews Series 20 (Properties of Crystalline Silicon), 905 (1999).

188. Silicon oxidation and ultra-thin oxide formation on silicon studied by infrared absorption spectroscopy, K. T. Queeney, Y. J. Chabal, M. K. Weldon, and K. Raghavachari, Physica Status Solidi a-Applied Research 175 (1), 77 (1999).

187. X-ray photoelectron study of gate oxides and nitrides, R. L. Opila, J. P. Chang, M. Du, J. Bevk, Y. Ma, M. Weldon, Y. Chabal, and A. Gurevich, Solid State Phenomena 65-6, 257 (1999).

186. Anharmonic adlayer vibrations on the Si(111): H surface, R. Honke, P. Jakob, Y. J. Chabal, A. Dvorak, S. Tausendpfund, W. Stigler, P. Pavone, A. P. Mayer, and U. Schroder, Physical Review B 59 (16), 10996 (1999).

185. Thermal evolution of impurities in wet chemical silicon oxides, A. B. Gurevich, M. K. Weldon, Y. J. Chabal, R. L. Opila, and J. Sapjeta, Applied Physics Letters 74 (9), 1257 (1999).

184. Molecules at surfaces and interfaces studied using vibrational spectroscopies and related techniques, P. Dumas, M. K. Weldon, Y. J. Chabal, and G. P. Williams, Surface Review and Letters 6 (2), 225 (1999).

183. Characterization and production metrology of thin transistor gate oxide films, A. C. Diebold, D. Venables, Y. Chabal, D. Muller, M. Weldon, and E. Garfunkel, Materials Science in Semiconductor Processing 2 (2), 103 (1999).

182. Infrared absorption studies of wet chemical oxides: Thermal evolution of impurities, Y. J. Chabal, M. K. Weldon, A. B. Gurevich, and S. B. Christman, Solid State Phenomena 65-6, 253 (1999).

181. Spectroscopic studies of H-decorated interstitials and vacancies in thin-film silicon exfoliation, Y. J. Chabal, M. K. Weldon, Y. Caudano, B. B. Stefanov, and K. Raghavachari, Physica B-Condensed Matter 274, 152 (1999).

180. Y. J. Chabal, Passivation of crystalline silicon surfaces in Properties of Crystalline Silicon, edited by R. Hull (Datareviews Series 20, 1999), 211. 1998 179. Novel co-sputtered fluorinated amorphous carbon films for sub-0.25 mu m low-? damascene multilevel interconnect applications, W. Zhu, C. S. Pai, H. E. Bair, H. W. Krautter, R. L. Opila, B. S. Dennis, A. Pinczuk, Y. J. Chabal, G. Grundmeier, J. E. Graebner, K. P. Cheung, F. C. Schilling, C. B. Case, R. Liu, and S. Jin, International Electron Devices Meeting 1998 – Technical Digest, 845 (1998).

178. Mechanistic studies of silicon wafer bonding and layer exfoliation, M. K. Weldon, V. E. Marsico, Y. J. Chabal, A. Agarwal, D. J. Eaglesham, J. Sapjeta, W. L. Brown, D. C. Jacobson, Y. Caudano, S. B. Christman, and E. E. Chaban, Semiconductor Wafer Bonding: Science, Technology, and Applications Iv 36, 229 (1998).

177. Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation, M. K. Weldon, M. Collot, Y. J. Chabal, V. C. Venezia, A. Agarwal, T. E. Haynes, D. J. Eaglesham, S. B. Christman, and E. E. Chaban, Applied Physics Letters 73 (25), 3721 (1998).

176. The role of implantation damage in the production of silicon-on-insulator films by co-implantation of He+ and H+, V. C. Venezia, T. E. Haynes, A. Agarwal, D. J. Eaglesham, O. W. Holland, M. K. Weldon, and Y. J. Chabal, Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. 2, 1385 (1998).

175. Silicon epoxide: Unexpected intermediate during silicon oxide formation, B. B. Stefanov, A. B. Gurevich, M. K. Weldon, K. Raghavachari, and Y. J. Chabal, Physical Review Letters 81 (18), 3908 (1998).

174. Initial stage of the growth of Fe on Si(111)(1×1)-H, M. G. Martin, J. Avila, M. Gruyters, C. Teodorescu, P. Dumas, Y. J. Chabal, and M. C. Asensio, Applied Surface Science 123, 156 (1998).

173. Hydrogen structures in heavily hydrogenated crystalline and amorphous silicon, W. B. Jackson, A. Franz, Y. Chabal, M. K. Weldon, H. C. Jin, and J. R. Abelson, Hydrogen in Semiconductors and Metals 513, 381 (1998).

172. Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated interdimer coupling on Si(100)-(2 x 1), A. B. Gurevich, B. B. Stefanov, M. K. Weldon, Y. J. Chabal, and K. Raghavachari, Physical Review B 58 (20), R13434 (1998).

171. An infrared study of H8Si8O12 cluster adsorption on Si(100) surfaces, J. Eng, K. Raghavachari, L. M. Struck, Y. J. Chabal, B. E. Bent, M. M. Banaszak-Holl, F. R. McFeely, A. M. Michaels, G. W. Flynn, S. B. Christman, E. E. Chaban, G. P. Williams, K. Radermacher, and S. Mantl, Journal of Chemical Physics 108 (20), 8680 (1998).

170. Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes, Y. Caudano, M. K. Weldon, Y. J. Chabal, B. B. Stefanov, K. Raghavachari, D. C. Jacobson, S. B. Christman, and E. E. Chaban, Semiconductor Wafer Bonding: Science, Technology, and Applications Iv 36, 365 (1998).

169. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures, G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. S. Urdahl, Applied Physics Letters 73 (11), 1517 (1998).

1997 168. Initial H2O-induced oxidation of Si(100)-(2×1), M. K. Weldon, B. B. Stefanov, K. Raghavachari, and Y. J. Chabal, Physical Review Letters 79 (15), 2851 (1997).

167. Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation, M. K. Weldon, V. E. Marsico, Y. J. Chabal, M. Collot, Y. Caudano, S. B. Christman, E. E. Chaban, D. C. Jacobson, W. L. Brown, J. Sapjeta, C. M. Hsieh, C. A. Goodwin, A. Agarwal, V. C. Venezia, T. E. Haynes, and W. B. Jackson, 1997 Ieee International Soi Conference Proceedings, 124 (1997).

166. On the mechanism of the hydrogen-induced exfoliation of silicon, M. K. Weldon, V. E. Marsico, Y. J. Chabal, A. Agarwal, D. J. Eaglesham, J. Sapjeta, W. L. Brown, D. C. Jacobson, Y. Caudano, S. B. Christman, and E. E. Chaban, Journal of Vacuum Science & Technology B 15 (4), 1065 (1997).

165. Vibrational study of silicon oxidation: H2O on Si(100), L. M. Struck, J. Eng, B. E. Bent, G. W. Flynn, Y. J. Chabal, S. B. Christman, E. E. Chaban, K. Raghavachari, G. P. Williams, K. Radermacher, and S. Mantl, Surface Science 380 (2-3), 444 (1997).

164. Infrared spectroscopy of covalently bonded species on silicon surfaces: Deuterium, chlorine, and cobalt tetracarbonyl, H. H. Luo, C. E. D. Chidsey, and Y. Chabal, Science and Technology of Semiconductor Surface Preparation 477, 415 (1997).

163. A vibrational study of ethanol adsorption on Si(100), J. Eng, K. Raghavachari, L. M. Struck, Y. J. Chabal, B. E. Bent, G. W. Flynn, S. B. Christman, E. E. Chaban, G. P. Williams, K. Radermacher, and S. Manti, Journal of Chemical Physics 106 (23), 9889 (1997).

162. Adsorption and reactivity of NO on Cu(111): A synchrotron infrared reflection absorption spectroscopic study, P. Dumas, M. Suhren, Y. J. Chabal, C. J. Hirschmugl, and G. P. Williams, Surface Science 371 (2-3), 200 (1997).

161. Applications of infrared absorption spectroscopy to the microelectronic industry, Y. J. Chabal, M. K. Weldon, and V. E. Marsico, Journal De Physique Iv 7 (C6, Surfaces et Interfaces des Materiaux Advances), C6/3 (1997).

160. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+, A. Agarwal, T. E. Haynes, V. C. Venezia, D. J. Eaglesham, M. K. Weldon, Y. J. Chabal, and O. W. Holland, 1997 Ieee International Soi Conference Proceedings, 44 (1997).

1996 159. Infrared spectroscopy as a probe of fundamental processes in microelectronics: Silicon wafer cleaning and bonding, M. K. Weldon, V. E. Marsico, Y. J. Chabal, D. R. Hamann, S. B. Christman, and E. E. Chaban, Surface Science 368, 163 (1996).

158. Mechanistic studies of hydrophilic wafer bonding and Si exfoliation for SOI fabrication, M. K. Weldon, V. Marsico, Y. J. Chabal, S. B. Christman, E. E. Chaban, D. C. Jacobson, J. B. Sapjeta, A. Pinczuk, B. S. Dennis, A. P. Mills, C. A. Goodwin, and C. M. Hsieh, 1996 IEEE International Soi Conference Proceedings, 150 (1996).

157. Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy, M. K. Weldon, Y. J. Chabal, D. R. Hamann, S. B. Christman, E. E. Chaban, and L. C. Feldman, Journal of Vacuum Science & Technology B 14 (4), 3095 (1996).

156. Infrared spectroscopy of oxide formation at silicon interfaces, M. K. Weldon, Y. J. Chabal, S. B. Christman, E. E. Chaban, L. C. Feldman, C. A. Goodwin, and C. M. Hsieh, Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices 96 (3), 121 (1996).

155. Vibrational interactions at surfaces: H2O on Si(100), K. Raghavachari, Y. J. Chabal, and L. M. Struck, Chemical Physics Letters 252 (3-4), 230 (1996).

154. Vibrational study of C-60 overlayers on H/Si(111)-(1×1), P. Dumas, M. Gruyters, P. Rudolf, L. M. He, L. M. Yu, G. Gensterblum, R. Caudano, and Y. J. Chabal, Surface Science 368, 330 (1996).

1995 153. The role of hydrogen in silicon wafer bonding: An infrared study, M. K. Weldon, Y. J. Chabal, S. B. Christman, J. Bourcereau, C. A. Goodwin, C. M. Hsieh, S. Nakahara, R. H. Shanaman, W. G. Easter, and L. C. Feldman, 1995 IEEE International Soi Conference Proceedings, 168 (1995).

152. Silicon surface chemistry by IR spectroscopy in the mid- to far-IR region: H2O and ethanol on Si(100), L. M. Struck, J. Eng, B. E. Bent, Y. J. Chabal, G. P. Williams, A. E. White, S. Christman, E. E. Chaban, K. Raghavachari, G. W. Flynn, K. Rademacher, and S. Mantl, Ultraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation 386, 395 (1995).

151. Size, shape, and crystallinity of luminescent structures in oxidized Si nanoclusters and H-passivated porous Si, S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y. H. Xie, F. M. Ross, T. D. Harris, W. L. Brown, Y. J. Chabal, P. J. Szajowski, E. E. Chaban, L. E. Brus, and P. H. Citrin, Microcrystalline and Nanocrystalline Semiconductors 358, 407 (1995).

150. X-ray absorption spectroscopy from H-passivated porous Si and oxidized Si nanocrystals, S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y. H. Xie, F. M. Ross, T. D. Harris, W. L. Brown, Y. J. Chabal, P. J. Szajowski, E. E. Chaban, L. E. Brus, and P. H. Citrin, Applications of Synchrotron Radiation Techniques to Materials Science Ii 375, 113 (1995).

149. Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si, S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y. H. Xie, F. M. Ross, Y. J. Chabal, T. D. Harris, L. E. Brus, W. L. Brown, E. E. Chaban, P. F. Szajowski, S. B. Christman, and P. H. Citrin, Physical Review B 52 (7), 4910 (1995).

148. Infrared-absorption spectroscopy of Si(100) and Si(111) surfaces after chemomechanical polishing, G. J. Pietsch, Y. J. Chabal, and G. S. Higashi, Journal of Applied Physics 78 (3), 1650 (1995).

147. The atomic-scale removal mechanism during chemomechanical polishing of Si(100) and Si(111), G. J. Pietsch, Y. J. Chabal, and G. S. Higashi, Surface Science 331, 395 (1995).

146. Vibrational characterization and electronic-properties of long range-ordered, ideally hydrogen-terminated Si(111), P. Dumas, Y. J. Chabal, R. Gunther, A. T. Ibrahimi, and Y. Petroff, Progress in Surface Science 48 (1-4), 313 (1995).

145. Characterization of silicon surfaces and interfaces by optical vibrational spectroscopy, Y. J. Chabal, M. A. Hines, and D. Feijoo, Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 13 (3), 1719 (1995).

144. Probing the interface of bonded silicon wafers with infrared absorption spectroscopy, Y. J. Chabal, D. Feijoo, S. B. Christman, and C. A. Goodwin, Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. Electrochem. Soc. 95-97, 305 (1995).

143. Real-time in-situ monitoring of surfaces during glow-discharge processing – NH3 and H2 plasma passivation of GaAs, E. S. Aydil, Z. H. Zhou, R. A. Gottscho, and Y. J. Chabal, Journal of Vacuum Science & Technology B 13 (2), 258 (1995).

1994 142. Low temperature formation of Si(111)7×7 surfaces from chemically prepared H/Si(111)-(1×1) surfaces, V. Le Thanh, M. Eddrief, C. A. Sebenne, P. Dumas, A. Talebibrahimi, R. Gunther, Y. J. Chabal, and J. Derrien, Applied Physics Letters 64 (24), 3308 (1994).

141. High-Resolution Photoemission Spectroscopy of Flat and Stepped Non Reconstructed H/Si(111) Surfaces, A. Talebibrahimi, R. Gunther, P. Dumas, G. Indlekofer, Y. J. Chabal, and Y. Petroff, Journal De Physique Iv 4 (C9), 89 (1994).

140. Dimensions of luminescent oxidized and porous silicon structures, S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y. H. Xie, F. M. Ross, T. D. Harris, W. L. Brown, Y. J. Chabal, L. E. Brus, and P. H. Citrin, Physical Review Letters 72 (16), 2648 (1994).

139. Chemomechanical polishing of silicon: surface termination and mechanism of removal, G. J. Pietsch, G. S. Higashi, and Y. J. Chabal, Applied Physics Letters 64 (23), 3115 (1994).

138. Transient vibrational mode renormalization in dipole-coupled adsorbates at surfaces, K. Kuhnke, A. L. Harris, Y. J. Chabal, P. Jakob, and M. Morin, Journal of Chemical Physics 100 (9), 6896 (1994).

137. Monohydride structures on chemically prepared silicon surfaces, P. Jakob, Y. J. Chabal, K. Kuhnke, and S. B. Christman, Surface Science 302 (1-2), 49 (1994).

136. Low-frequency dynamics of Co/Cu breakdown of Born-Oppenheimer approximation, C. J. Hirschmugl, Y. J. Chabal, F. M. Hoffmann, and G. P. Williams, Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 12 (4), 2229 (1994).

135. Measuring the structure of etched silicon surfaces with Raman spectroscopy, M. A. Hines, Y. J. Chabal, T. D. Harris, and A. L. Harris, Journal of Chemical Physics 101 (9), 8055 (1994).

134. Core levels spectroscopy of the Si surfaces, R. Gunther, A. Taleb-Ibrahimi, K. Hricovini, P. Dumas, Y. Chabal, and Y. Petroff, Form. Semicond. Interfaces, Proc. Int. Conf., 4th, 3 (1994).

133. Silicon-wafer bonding studied by infrared-absorption spectroscopy, D. Feijoo, Y. J. Chabal, and S. B. Christman, Applied Physics Letters 65 (20), 2548 (1994).

132. Spectroscopic characterization of model surfaces: chemically prepared, ideally hydrogen-terminated Si(111), Y. J. Chabal and P. Dumas, Physicalia Magazine. 16, 183 (1994).

131. Surface vibrational spectroscopies for silicon processing, Y. J. Chabal, Proceedings of International Conference on Advanced Microelectronic Devices and Processing S2, 69 (1994).

130. Y. J. Chabal, Infrared spectroscopy of semiconductor surface vibrations in Handbook of semiconductors, Volume 2: Optical properties, edited by M. Balanski (Elsevier Science, Amsterdam, Netherlands, 1994), 187. 129. Surface chemical reactions at the atomic scale: Gas reactions with semiconductors studied with scanning tunneling microscopy, R. S. Becker, Y. J. Chabal, G. S. Higashi, and A. J. Becker, Scanning Microscopy, Supplement 7, 1993, 269 (1994).

128. Real-time monitoring of surface chemistry during plasma processing, E. S. Aydil, R. A. Gottscho, and Y. J. Chabal, Pure and Applied Chemistry 66 (6), 1381 (1994).

1993 127. Real-time, in situ monitoring of room-temperature silicon surface cleaning using hydrogen and ammonia plasmas, Z.-H. Zhou, E. S. Aydil, R. A. Gottscho, Y. J. Chabal, and R. Reif, J. Electrochem. Soc. 140 (11), 3316 (1993).

126. Real time monitoring of silicon surface cleaning using hydrogen and ammonia plasmas, Z. H. Zhou, E. S. Aydil, R. A. Gottscho, Y. J. Chabal, and R. Reif, Proceedings – Electrochemical Society 93-21 (Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control, 1993), 35 (1993).

125. Step relaxation and surface stress at H-terminated vicinal Si(111), K. Raghavachari, P. Jakob, and Y. J. Chabal, Chemical Physics Letters 206 (1-4), 156 (1993).

124. First-principles study of the etching reactions of HF and H2O with Si/SiO2 surfaces, K. Raghavachari, G. S. Higashi, Y. J. Chabal, and G. W. Trucks, Surface Chemical Cleaning and Passivation for Semiconductor Processing Symposium. Mater. Res. Soc. 315, 437 (1993).

123. Interadsorbate vibrational-energy flow on stepped vicinal H/Si(111) surfaces, M. Morin, K. Kuhnke, P. Jakob, Y. J. Chabal, N. J. Levinos, and A. L. Harris, J. Electron Spectro. Rel. Phenom 64-65, 11 (1993).

122. Vibrational energy transfer among adsorbate modes: picosecond dynamics on stepped H/Si(111), K. Kuhnke, M. Morin, P. Jakob, N. J. Levinos, Y. J. Chabal, and A. L. Harris, Journal of Chemical Physics 99 (8), 6114 (1993).

121. Imperfections on the chemically prepared, ideally H-terminated Si(111)-(1×1) surfaces, P. Jakob, Y. J. Chabal, K. Raghavachari, P. Dumas, and S. B. Christman, Surface Science 285 (3), 251 (1993).

120. Discrete nature of inhomogeneity on stepped H/Si(111) surfaces: spectroscopic identification of individual terrace sizes, P. Jakob, Y. J. Chabal, K. Raghavachari, and S. B. Christman, Physical Review B 47 (11), 6839 (1993).

119. The role of kinks in the Si-H vibrational spectrum of vicinal Si(111)-<-1-12> surfaces, P. Jakob, Y. J. Chabal, and K. Raghavachari, Journal of Electron Spectroscopy and Related Phenomena 64-65, 59 (1993).

118. Electronic structure and its dependence on local order for H/Si(111)-(1×1) surfaces, K. Hricovini, R. Gunther, P. Thiry, A. Taleb-Ibrahimi, G. Indlekofer, J. E. Bonnet, P. Dumas, Y. Petroff, X. Blase, X. Zhu, S. G. Louie, Y. J. Chabal, and P. A. Thiry, Physical Review Letters 70 (13), 1992 (1993).

117. Dipole forbidden vibrational-modes for NO and CO on Cu Observed in the Far Ir, C. J. Hirschmugl, P. Dumas, Y. J. Chabal, F. M. Hoffmann, M. Suhren, and G. P. Williams, J. Electron Spectro. Rel. Phenom. 64-65, 67 (1993).

116. Looking up the down staircase – Surface raman-spectroscopy as a probe of adsorbate orientation, M. A. Hines, T. D. Harris, A. L. Harris, and Y. J. Chabal, J. Electron Spectro. Rel. Phenom. 64-65, 183 (1993).

115. Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces, M. A. Hines, Y. J. Chabal, T. D. Harris, and A. L. Harris, Physical Review Letters 71 (14), 2280 (1993).

114. The Influence of HF, OH and Dissolved O2 in Silicon Surface Chemical Cleaning, G. S. Higashi, Y. J. Chabal, K. Raghavachari, R. S. Becker, M. P. Green, K. Hanson, T. Boone, J. H. Eisenberg, S. F. Shive, G. N. DiBelo, and K. L. Fulford, Proceedings of the Fourth international Symposium on ULSI scientific technology, 23 (1993).

113. G. S. Higashi and Y. J. Chabal, Silicon surface chemical composition and morphology in Handbook of semiconductor wafer cleaning technology. Science, technology and applications, edited by W. Kern (Noyes publications, East Windsor, 1993), 433. 112. Enhanced cohesion of photo-oxygenated fullerene films: a new opportunity for lithography, A. F. Hebard, C. B. Eom, R. M. Fleming, Y. J. Chabal, A. J. Muller, S. H. Glarum, G. J. Pietsch, R. C. Haddon, A. M. Mujsce, M. A. Paczkowski, and G. P. Kochanski, Appl. Phys. A 57 (3), 299 (1993).

111. Vibrational-energy flow at stepped H/Si(111) – Phonons, dipoles and screening, A. L. Harris, K. Kuhnke, M. Morin, P. Jakob, N. J. Levinos, and Y. J. Chabal, Faraday Discuss. 96, 217 (1993).

110. Vibrational properties of H/Si(111)-(1×1) surfaces: infrared absorption and electron energy loss spectroscopic studies, P. Dumas, Y. J. Chabal, and P. Jakob, Applied Surface Science 66(1-4), 580 (1993).

109. Infrared spectroscopy of H-terminated silicon surfaces, Y. J. Chabal, A. L. Harris, K. Raghavachari, and J. C. Tully, International Journal of Modern Physics B 7 (4), 1031 (1993).

108. Infrared spectroscopy of semiconductor surfaces: H-terminated silicon surfaces, Y. J. Chabal, Journal of Molecular Structure 292, 65 (1993).

107. Y. J. Chabal, Studies of semiconductor surfaces: vibrational spectroscopy of adsorbates in Internal reflexion spectroscopy: theory and applications, edited by F. M. Mirabella (Marcel Dekker, New York, 1993), 791. 106. Surface chemical reactions studied with scanning tunneling microscopy, R. S. Becker, A. J. Becker, G. S. Higashi, and Y. J. Chabal, Scanning microscopy suppl. 7, 269 (1993).

105. Real time in situ monitoring of surface reactions during plasma passivation of GaAs, E. S. Aydil, Z. Zhen-Hong, R. A. Gottscho, and Y. J. Chabal, ECS proceedings (1993).

104. Real time in situ monitoring of surface reactions during plasma passivation of GaAs, E. S. Aydil, K. Giapis, Z. Zhen-Hong, J. A. Gregus, R. A. Gottscho, and Y. J. Chabal, Applied Physics Letters 62 (24), 3156 (1993).

1992 103. Vibrational energy transfer on hydrogen-terminated vicinal Si(111) surfaces: interadsorbate energy flow, M. Morin, P. Jakob, N. J. Levinos, Y. J. Chabal, and A. L. Harris, Journal of Chemical Physics 96 (8), 6203 (1992).

102. Kinetic model of the chemical etching of Si(111) surfaces by buffered HF solutions, P. Jakob, Y. J. Chabal, K. Raghavachari, R. S. Becker, and A. J. Becker, Surface Science 275 (3), 407 (1992).

101. Morphology of hydrogen-terminated Si(111) and Si(100) surfaces upon etching in HF and buffered-HF solutions, P. Dumas, Y. J. Chabal, and P. Jakob, Surface Science 269-270, 867 (1992).

100. Electron energy loss spectroscopy of H-terminated Si(111) and Si(100) prepared by chemical etching, P. Dumas and Y. J. Chabal, Journal of Vaccum Science & Technology 10(4), 2160 (1992).

99. Etching of silicon (111) and (100) surfaces in HF solutions: H-termination, atomic structure and overall morphology, Y. J. Chabal, Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing Symposium. Mater. Res. Soc. 259, 349 (1992).

98. Inverse-photoemission spectroscopy of the unreconstructed, ideally H-terminated Si(111) surface, S. Bouzidi, F. Coletti, J. M. Debever, P. A. Thiry, P. Dumas, and Y. J. Chabal, Physical Review B 45 (3), 1187 (1992).

97. Conduction-bands asymmetry of Si(111) revealed by inverse photoemission, S. Bouzidi, F. Coletti, J. M. Debever, P. A. Thiry, P. Dumas, and Y. J. Chabal, Surface Science 269-270, 829 (1992).

1991 96. Comment on ‘Mechanism of HF etching of silicon surfaces: a theoretical understanding of hydrogen passivation’ (and reply), E. Sacher, A. Yelon, G. W. Trucks, K. Raghavachari, G. S. Higashi, and Y. J. Chabal, Physical Review Letters 66 (12), 1647 (1991).

95. Phase transitions, surface structures, and adsorbate bonding in the H/Mo(100) chemisorption system, J. A. Prybyla, P. J. Estrup, and Y. J. Chabal, Journal of Chemical Physics 94 (9), 6274 (1991).

94. Influence of silicon oxide on the morphology of HF-etched Si(111) surfaces: thermal versus chemical oxide, P. Jakob, P. Dumas, and Y. J. Chabal, Applied Physics Letters 59 (23), 2968 (1991).

93. Lineshape analysis of the Si-H stretching mode of the ideally H-terminated Si(111) surface: the role of dynamical dipole coupling, P. Jakob, Y. J. Chabal, and K. Raghavachari, Chemical Physics Letters 187 (3), 325 (1991).

92. Chemical etching of vicinal Si(111): dependence of the surface structure and the hydrogen termination on the pH of the etching solutions, P. Jakob and Y. J. Chabal, Journal of Chemical Physics 95 (4), 2897 (1991).

91. Comparison of Si(100) surfaces prepared using aqueous solutions of NH4F versus HF, G. S. Higashi, R. S. Becker, Y. J. Chabal, and A. J. Becker, Applied Physics Letters 58 (15), 1656 (1991).

90. Amortissement des vibrations d’atomes adsorbes sur une surface, P. Guyot-Sionnest, P. Dumas, and Y. J. Chabal, Le courrier du CNRS (Images de la Physique) 77, 50 (1991).

89. High-resolution surface infrared spectroscopy: H vibration on a Si(111) surface, P. Dumas and Y. J. Chabal, FT-IR spectral lines 12, 6 (1991).

88. Electron-energy-loss characterization of the H-terminated Si(111) and Si(100) surfaces obtained by etching in NH4F, P. Dumas and Y. J. Chabal, Chemical Physics Letters 181 (6), 537 (1991).

87. Vibrational dynamics of the ideally H-terminated Si(111) surface, Y. J. Chabal, P. Dumas, P. Guyot-Sionnest, and G. S. Higashi, Surface Science 242 (1-3), 524 (1991).

86. Infrared spectroscopy of hydrogen on silicon surfaces, Y. J. Chabal, Physica B 170 (1-4), 447 (1991).

1990 85. Oxidation of GaAs(110) with NO2: infrared spectroscopy, A. vom Felde, K. Kern, G. S. Higashi, Y. J. Chabal, S. B. Christman, C. C. Bahr, and M. J. Cardillo, Physical Review B 42 (8), 5240 (1990).

84. Monitoring low-coverage surface chemistry with bulk transport: NO2 dissociation and oxygen penetration at a GaAs(110) surface, A. vom Felde, C. Bahr, K. Kern, G. S. Higashi, Y. J. Chabal, and M. J. Cardillo, Physical Review B 42 (10), 6865 (1990).

83. Mechanism of HF etching of silicon surfaces: a theoretical understanding of hydrogen passivation, G. W. Trucks, K. Raghavachari, G. S. Higashi, and Y. J. Chabal, Physical Review Letters 65 (4), 504 (1990).

82. CO diffusion on Pt(111) with time-resolved infrared-pulsed molecular beam methods: critical tests and analysis, J. E. Reutt-Robey, D. J. Doren, Y. J. Chabal, and S. B. Christman, Journal of Chemical Physics 93 (12), 9113 (1990).

81. Low temperature adsorption and reaction of NO on GaAs(110), K. Kern, Y. J. Chabal, G. S. Higashi, A. vom Felde, and M. J. Cardillo, Chemical Physics Letters 168 (2), 203 (1990).

80. Adsorbate-substrate resonant interactions observed for CO on Cu(100) in the far infrared, C. J. Hirschmugl, G. P. Williams, F. M. Hoffmann, and Y. J. Chabal, Physical Review Letters 65 (4), 480 (1990).

79. Adsorbate-substrate resonant interactions observed for CO on Cu(100) and (111) in the far-IR using synchrotron radiation, C. J. Hirschmug, G. P. Williams, F. M. Hoffmann, and Y. J. Chabal, J. Electron Spectro. Rel. Phenom. 54-55, 109 (1990).

78. Ideal hydrogen termination of the Si(111) surface, G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Applied Physics Letters 56 (7), 656 (1990).

77. Lifetime of an adsorbate-substrate vibration: H on Si(111), P. Guyot-Sionnest, P. Dumas, Y. J. Chabal, and G. S. Higashi, Physical Review Letters 64 (18), 2156 (1990).

76. Lifetime of an adsorbate-substrate vibration measured by sum frequency generation: H on Si(111), P. Guyot-Sionnest, P. Dumas, and Y. J. Chabal, J. Electron Spectr. Rel Phenom 54-55, 27 (1990).

75. Coupling of an adsorbate vibration to a substrate surface phonon: H on Si(111), P. Dumas, Y. J. Chabal, and G. S. Higashi, Physical Review Letters 65 (9), 1124 (1990).

74. Lineshape of the Si-H stretching vibration for the ideally H-terminated Si(111)1×1, P. Dumas, Y. J. Chabal, and G. S. Higashi, J. Electron Spectr. Rel. Phenom. 54-55, 103 (1990).

73. Inelastic helium scattering measurements of surface phonons in hydrogen-terminated Si(111) (1×1), R. B. Doak, Y. J. Chabal, G. S. Higashi, and P. Dumas, J. Electron Spectr. Rel. Phenom. 54-55, 291 (1990).

72. Molecular diffusion on metal surfaces: time-resolved infrared spectroscopy and other techniques, Y. J. Chabal, Vacuum 41 (1-3), 70 (1990).

71. Adsorption states and orientation of n-alkyl anhydride molecules on oxidized aluminium surface, K. Berrada, P. Dumas, Y. J. Chabal, and P. Dubot, J. Electron Spectr. Rel. Phenom. 54-55, 1153 (1990).

70. Atomic scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorption, R. S. Becker, G. S. Higashi, Y. J. Chabal, and A. J. Becker, Physical Review Letters 65 (15), 1917 (1990).

1989 69. Coherence effects in long-wavelength infrared synchrotron radiation emission, G. P. Williams, C. J. Hirschmugl, E. M. Kneedler, P. Z. Takacs, M. Shleifer, Y. J. Chabal, and F. M. Hoffmann, Physical Review Letters 62 (3), 261 (1989).

68. Infrared synchrotron radiation measurements at Brookhaven using a Nicolet 20F spectrometer, G. P. Williams, C. J. Hirschmug, E. A. Sullivan, E. M. Kneedler, Y. J. Chabal, F. M. Hoffmann, and K. D. Moeller, FT-IR spectral lines 10, 5 (1989).

67. CO diffusion on Pt(111) by time-resolved surface infrared spectroscopy, J. E. Reutt-Robey, Y. J. Chabal, D. J. Doren, and S. B. Christman, Journal of Vaccum Science & Technology 7(3), 2227 (1989).

66. Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: hydrogen termination and surface morphology, Y. J. Chabal, G. S. Higashi, K. Raghavachari, and V. A. Burrows, Journal of Vaccum Science & Technology 7(3), 2104 (1989).

65. Structure and kinetics of molecules at surfaces, Y. J. Chabal, 7th International Conference on Fourier transform spectroscopy 1145, 34 (1989).

64. Y. Chabal, G. S. Higashi, and K. Raghavachari, in Materials Research Society: Chemical Perspectives of Microelectronic Materials (1989), Vol. 131, pp. 191. 1988 63. Characteristics and performance of the National Synchrotron Light Source infra-red beamline, G. P. Williams, C. J. Hirschmugl, D. P. Siddons, E. A. Sullivan, K. D. Moeller, P. Petrone, E. Angelides, Y. J. Chabal, and F. M. Hoffmann, Proceedings of Spie – the International Society for Optical Engineering, Thirteenth International Conference on Infrared and Millimeter Waves. 1039, 263 (1988).

62. Laser-assisted deposition of Fe and W: photodecomposition of Fe(CO)5 and W(CO)6 on Si(111)-(7×7), J. R. Swanson, C. M. Friend, and Y. J. Chabal, Laser and Particle-Beam Chemical Processing for Microelectronics. Symposium. Mater. Res. Soc. 101, 201 (1988).

61. Microscopic CO diffusion on a Pt (111) surface by time-resolved infrared spectroscopy, J. E. Reutt-Robey, D. J. Doren, Y. J. Chabal, and S. B. Christman, Physical Review Letters 61 (24), 2778 (1988).

60. Hydrogen phonon spectra on Pt(111) at T=100 and 160 K, J. E. Reutt, Y. J. Chabal, and S. B. Christman, Journal of Vaccum Science & Technology 6 (3), 816 (1988).

59. Coupling of H vibration to substrate electronic states in Mo(100)-p(1×1)H and W(100)-p(1×1)H; example of strong breakdown of adiabaticity, J. E. Reutt, Y. J. Chabal, and S. B. Christman, Physical Review B 38 (5), 3112 (1988).

58. Review of semiconductor interfaces: formation and properties, Y. J. Chabal, Opt. Engr 27, SR 153 (1988).

57. Optical spectroscopy at surfaces, Y. J. Chabal, Science 239, G195 (1988).

56. Y. J. Chabal, Infrared spectroscopy of semiconductor surfaces in Chemistry and physics of solid surfaces VII, edited by R. Vanselow and R.F. Howe (1988), 108. 55. Surface infrared spectroscopy, Y. J. Chabal, Surface Science Reports 8 (5-7), 211 (1988).

54. Chemistry, structures, dynamics and kinetics of adsorbates on surfaces by Fourier transform infrared spectroscopy, Y. J. Chabal, Journal of the Optical Society of America 172, 471 (1988).

53. Infrared spectroscopy of Si(111) surfaces after HF treatment:Hydrogen termination and surface morphology, V. A. Burrows, Y. J. Chabal, G. S. Higashi, K. Raghavachari, and S. B. Christman, Applied Physics Letters 53 (11), 998 (1988).

1987 52. Laser-assisted deposition of iron on Si(111)-(7×7): the mechanism and energetics of Fe(CO)5 decomposition, J. R. Swanson, C. M. Friend, and Y. J. Chabal, Journal of Chemical Physics 87 (8), 5028 (1987).

51. Deposition of iron on Si(111)-(7×7): photo- and electron-assisted decomposition of Fe(CO)5, J. R. Swanson, C. M. Friend, and Y. J. Chabal, Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces. Symposium. Mater. Res. Soc., 559 (1987).

50. Hydrogen phonon spectra on transition metal surfaces: infrared reflection adsorption investigations of Mo(100), W(100) and Pt(111), J. E. Reutt, Y. J. Chabal, and S. B. Christman, J. Electron Spectro. Rel. Phenom 44 (1), 325 (1987).

49. Reconstructive phase transitions and effective adsorbate-adsorbate interactions: H/Mo(100) and H/W(100), J. A. Prybyla, P. J. Estrup, S. C. Ying, Y. J. Chabal, and S. B. Christman, Physical Review Letters 58 (18), 1877 (1987).

48. Reconstruction, adsorbate bonding, and desorption kinetics of H/Mo(100), J. A. Prybyla, P. J. Estrup, and Y. J. Chabal, Journal of Vacuum Science & Technology A 5 (4), 791 (1987).

47. Studies of self-sustained reaction rate oscillations: III The carbon model, N. A. Collins, S. Sundaresan, and Y. J. Chabal, Surface Science 180 (1), 136 (1987).

46. Molecular hydrogen in a-Si:H, Y. J. Chabal and C. K. N. Patel, Reviews of Modern Physics 59 (4), 835 (1987).

45. Y. J. Chabal, S. B. Christman, V. A. Burrows, N. A. Collins, and S. Sundaresan, Self-sustained kinetics oscillations in the catalytic CO oxidation on platinum in Kinetics of interface reactions, edited by M. Grunze and J. Kreuzer (Springer Verlag, Berlin, 1987), 285. 44. Hydrogen-induced reconstruction of W(100) and Mo(100) by surface infrared spectroscopy, Y. J. Chabal, S. B. Christman, J. J. Arrecis, J. A. Prybyla, and P. J. Estrup, J. Electron Spectro. Rel. Phenom 44 (1), 17 (1987).

43. Y. J. Chabal, Vibrational properties at semiconductor surfaces and interfaces in Semiconductor Interfaces: Formation and Properties., edited by G. Le Lay, J. Derrien, and N. Boccara (Springer-Verlag, Berlin, West Germany, 1987), 301. 42. Properties of adsorbed atoms and molecules by surface infrared spectroscopy, Y. J. Chabal, Journal of the Electrochemical Society 87-88, 1 (1987).

41. Studies on self sustained reaction-rate oscillations: II the rate of carbon and oxides in the oscillatory oxidation of carbon monoxide on platinum, V. A. Burrows, S. Sundaresan, Y. J. Chabal, and S. B. Christman, Surface Science 180 (1), 110 (1987).

40. Real-time study of self-sustained oscillations in the Co oxidation rate on Pt, V. A. Burrows, S. Sundaresan, and Y. J. Chabal, Journal of Vaccum Science & Technology 5 (4), 801 (1987).

1986 39. Dynamics of H chemisorbed on Si(100) and W(100) studied by high-resolution infrared spectroscopy, Y. J. Chabal, Journal of Electron Spectroscopy Related Phenom. 38, 159 (1986).

38. High-resolution infrared spectroscopy of adsorbates on semiconductor surfaces: hydrogen on Si(100) and Ge(100), Y. J. Chabal, Surface Science 168 (1-3), 594 (1986).

37. Infrared absorption measurement of the overtone of the wagging mode of hydrogen on W(100), Y. J. Chabal, Journal of Vaccum Science & Technology 4 (3), 1324 (1986).

36. H-induced structural phase transitions on W(100) by surface infrared spectroscopy, J. J. Arrecis, Y. J. Chabal, and S. B. Christman, Physical Review B 33 (12), 7906 (1986).

1985 35. Infrared linewidths and vibrational lifetimes at surfaces: H on Si(100), J. C. Tully, Y. J. Chabal, K. Raghavachari, J. M. Bowman, and R. R. Lucchese, Physical Review B 31 (2), 1184 (1985).

34. Linewidth of H chemisorbed on W(100): an infrared study, D. M. Riffe, L. M. Hanssen, A. J. Sievers, Y. J. Chabal, and S. B. Christman, Surface Science 161 (1), L559 (1985).

33. New ordered structure for the H-saturated Si(100) surface: the (3×1) phase, Y. J. Chabal and K. Raghavachari, Physical Review Letters 54 (10), 1055 (1985).

32. Effects of high pressure molecular hydrogen in a-Si:H, Y. J. Chabal and C. K. N. Patel, J. Non-Crystal. Solids 77-78 (1), 201 (1985).

31. Evidence for high pressure gaseous molecular hydrogen in a-Si:H. An infrared study, Y. J. Chabal and C. K. N. Patel, Proceedings of the 17th International Conference on the Physics of Semiconductors, 909 (1985).

30. Y. J. Chabal, High-resolution infrared spectroscopy and surface structure in The structure of surfaces, edited by M. A. Van Hove and S. Y. Tong (Springer Verlag (Springer Series in Surf. Sci), New York, 1985), 70. 29. Infrared study of the chemisorption of hydrogen and water on vicinal Si(100)2×1 surfaces, Y. J. Chabal, Journal of Vaccum Science & Technology A 3 (3), 1448 (1985).

28. Electronic damping of hydrogen vibration on the W(100) surface, Y. J. Chabal, Physical Review Letters 55 (8), 845 (1985).

27. Studies on self-sustained reaction-rate oscillations. I. Real-time surface infrared measurements during oscillatory oxidation of carbon monoxide on platinum, V. A. Burrows, S. Sundaresan, Y. J. Chabal, and S. B. Christman, Surface Science 160 (1), 122 (1985).

1984 26. IR spectroscopy with surface electromagnetic waves, A. J. Sievers, Z. Schlesinger, and Y. J. Chabal, Journal de Physique (Paris) 45 (C5), 167 (1984).

25. Surface infrared study of Si(100)-(2×1)H, Y. J. Chabal and K. Raghavachari, Physical Review Letters 53 (3), 282 (1984).

24. Infrared absorption in a-Si:H: first observation of gaseous molecular H2 and Si-H overtone, Y. J. Chabal and C. K. N. Patel, Physical Review Letters 53 (2), 210 (1984).

23. Solid hydrogen in amorphous silicon: phase transition, Y. J. Chabal and C. K. N. Patel, Physical Review Letters 53 (18), 1771 (1984).

22. Infrared absorption in a-Si:H: first observation of the gas-solid transition of occluded molecular H2, Y. J. Chabal and C. K. N. Patel, Physica B & C 126 (1-3), 461 (1984).

21. Evidence of dissociation of water on the Si (100) 2×1 surface, Y. J. Chabal and S. B. Christman, Physical Review B 29 (12), 6974 (1984).

20. Hydride formation on the Si(100):H2O surface, Y. J. Chabal, Physical Review B 29 (6), 3677 (1984).

1983 19. Sample manipulator for operation between 20 and 2000K in ultrahigh vacuum, E. E. Chaban and Y. J. Chabal, Review of Scientific Instruments 54 (8), 1031 (1983).

18. Hydrogen chemisorption on Si(111)-(7×7) and -(1×1) surfaces. A comparative infrared study, Y. J. Chabal, G. S. Higashi, and S. B. Christman, Physical Review B 28 (8), 4472 (1983).

17. Y. J. Chabal, S. B. Christman, E. E. Chaban, and M. T. Yin, presented at the Proceedings of the 29th National Symposium of the American Vacuum Society., Baltimore, MD, USA, 1983 (unpublished).

16. High resolution infrared study of hydrogen chemisorbed on Si (100), Y. J. Chabal, E. E. Chaban, and S. B. Christman, J. Electron Spectro. Rel. Phenom. 29, 35 (1983).

15. Hydrogen vibration on Si(111)7×7: evidence for a unique chemisorption site, Y. J. Chabal, Physical Review Letters 50 (23), 1850 (1983).

1982 14. Chemical bonding at the Si-metal interface:Si-Ni and Si-Cr, A. Franciosi, J. H. Weaver, D. G. O’Neill, Y. J. Chabal, J. E. Rowe, J. M. Poate, O. Bisi, and C. Calandra, Journal of Vacuum Science & Technology A 21(2), 624 (1982).

13. Stoichiometry and structural disorder effects on the electronic structure of Ni and Pd silicides, Y. J. Chabal, J. E. Rowe, J. M. Poate, A. Franciosi, and J. H. Weaver, Physical Review B 26 (6), 2748 (1982).

12. Laser quenched and impurity induced metastable Si (111) 1×1 surfaces, Y. J. Chabal, J. E. Rowe, and S. B. Christman, journal of vacuum Science & Technology 20 (3), 763 (1982).

11. Photoemission and band-structure results for NiSi2, Y. J. Chabal, D. R. Hamann, J. E. Rowe, and M. Schluter, Physical Review B 25 (12), 7598 (1982).

10. Infrared study of hydrogen chemisorbed on W(100) by surface-electromagnetic-wave spectroscopy, Y. J. Chabal and A. J. Sievers, Physical Review B 24 (6), 2921 (1981).

1981 9. Buckling reconstruction on laser-annealed Si(111) surfaces, Y. J. Chabal, J. E. Rowe, and D. A. Zwemer, Physical Review Letters 46 (9), 600 (1981).

8. Nature of vicinal laser-annealed Si(111) surfaces, Y. J. Chabal, J. E. Rowe, and S. B. Christman, Physical Review B 24 (6), 3303 (1981).

7. Si(111): Ni surface studies by AES, UPS, LEED, and ion scattering, Y. J. Chabal, R. J. Culbertson, L. C. Feldman, and J. E. Rowe, journal of vacuum Science & Technology 18 (3), 880 (1981).

6. High frequency modulation interferometric study of electron stimulated infrared (IR) luminescence in InSb, Y. J. Chabal, D. L. Allara, D. Teicher, and J. E. Rowe, Proceedings of Spie – the International Society for Optical Engineering 289, 82 (1981).

1975 -1980 5. High-resolution infrared study of hydrogen (1×1) on tungsten (100), Y. J. Chabal and A. J. Sievers, Physical Review Letters 44 (14), 944 (1980).

4. Evidence for a disordered V19x V19 structure for the quenched clean Si(111) surface, Y. J. Chabal and J. E. Rowe, Proceedings of an International Conference on Ordering in Two Dimensions, 251 (1980).

3. Surface electromagnetic wave launching at the edge of a metal film, Y. J. Chabal and A. J. Sievers, Applied Physics Letters 32 (2), 90 (1978).

2. IR study of molecules adsorbed on metal surfaces by surface electromagnetic wave spectroscopy, Y. J. Chabal and A. J. Sievers, Journal of Vaccum Science & Technology 15 (2), 638 (1978).

1. Temperature dependence of the far-infrared absorption spectrum in amorphous dielectrics, K. K. Mon, Y. J. Chabal, and A. J. Sievers, Physical Review Letters 35 (20), 1352 (1975).