Overview
The Heterogeneous Engineering Device (HED) Lab at UT Dallas explores a new paradigm of semiconductor heterojunctions enabled by Grafting, a unique approach that integrates lattice-mismatched materials through ultrathin quantum tunneling interlayers.
We investigate the inherently complex challenges of lattice mismatches at semiconductor interfaces, which have long been considered difficult—if not impossible—to overcome using conventional techniques.
Our research spans from fundamental studies of interface physics to device-level design, fabrication, and characterization, ultimately advancing wafer-scale heterogeneous integration technologies for next-generation electronics and photonics.
Research Directions
Ultrawide-Bandgap Semiconductors for High-Power and High-Speed Electronics
Near- to Mid-Infrared Optoelectronics with Novel Materials
Wafer-Scale Heterogeneous Integration Technologies
Large-Scale Semiconductor Nanomembrane Devices for Bio-integrated Applications
