Publications

A full list of publications can be found here –> Google Scholar

Journals

-2025

  1. J. Zhou, Y. Lu, C. Wang, L. Suter, A. Hardy, T. K. Ng, K. Sun, Y. Guo, Y. Liu, T.-H. Tsai, X. Zhou, C. S. Bailey, M. Eller, S. Liu, Z. Mi, B. S. Ooi, M. Muehle, K. Fountaine, V. Gambin, J.-H. Seo, and Z. Ma, “Preliminary Demonstration of Diamond-GaN pn Diodes via Grafting,” arXiv:2510.25028 (2025)
  2. Y. Liu, Y. Li, T.-H. Tsai, S. Acharya, Y. Lu, J. Zhou, S. Haessly, S.-Q. Yu, N. M Dissanayake, E. K Huang, J. Gong, and Z. Ma, “Band alignment of grafted Si/Ge0.89Sn0.11 heterojunction determined by X-ray photoelectron spectroscopy,” http://dx.doi.org/10.2139/ssrn.5678985 (2025)
  3. Y. Lu, V. Khandelwal, T.-H. Tsai, J. Zhou, J. Gong, S. Haessly, Y. Liu, Z. Liu, T.-K. Ng, B. S. Ooi, X. Li, and Z. Ma, “Surface Dipole Formation and Electronic Structure Evolution on β-Ga2O3,” Applied Physics Letters, 127, 191605 (2025).
  4. Y. Lu, J. Zhou, H. Cao, T.-H. Tsai, M. Eller, J. Gong, Y. Liu, C. Bailey, S. Liu, H. N. Abbasi, D. Liu, Z. Liu, M. Nong, K. Fountaine, V. Gambin, X. Li, and Z. Ma, “Band Alignment and Leakage Mechanism Analysis of p-Si/n-AlN Heterojunction Diodes with Al2O3 Interlayer,” ACS Applied Electronic Materials, 7, 21, (2025). DOI: 10.1021/acsaelm.5c01317.
  5. Y. Liu†, Y. Li†, S. Archarya, J. Zhou, J. Gong, Q. Wang, A. Abrand, Y. Lu, D. Vincent, S. Haessly, T.K. Ng, P. K. Mohseni, B. S. Ooi, S. Q. Yu, and Z. Ma, “Demonstration of AlGaAs/GeSn p-i-n diodes,” APL Electronic Devices, 1, 046113 (2025). DOI: 10.1063/5.0284809. [Preprint] ✨Featured Article
  6. J. Zhou†, Y. Wang†, Z. Yao†, Q. Wang, Y. Banda, J. Gong, Y. Liu, C. Adamo, P. Marshall, Y. Li, T. Tsai, Y. Li, V. Gambin, T. K. Ng, B. Ooi, and Z. Ma, “Grafted GaAs/Si Heterojunction Tunnel Diodes with Improved Peak-to-valley Current Ratio (PVCR) of up to 36.38,” IEEE Electron Device Letters, 46, 11 (2025). DOI: 10.1109/LED.2025.3602858. [Preprint]
  7. H. N. Abbasi†, Y. Lu†, J. Zhou†, X. Qi, Z. Ju, V. S. Nookala, A. Abrand, P. K. Mohseni, Y. Zhang, and Z. Ma, “Band Alignment and Electrical Characterizations of a Grafted Si/MgCdTe Heterojunction for Tandem Solar Cells Applications,” Journal of Applied Physics, 138, 093102 (2025). DOI: 10.1063/5.0277928. 🧩Equal contribution.
  8. J. Zhou, H. Wang, Y. Guo, A. Abrand, Y. Li, Y. Liu, J. Gong, P. R. Huang, J. Shen, S. Xu, D. Vincent, S. Haessly, Y. Lu, M. Kim, S. Q. Yu, P. K. Moseni, G. E. Chang, Z. Mi, K. Sun, X. Gong, M. A. Kats, and Z. Ma, “Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting,” arXiv:2506.06849 (2025).
  9. H. Abbasi, H. Alamoudi, T. K. Ng, R. Singh, J. Gong, J. Zhou, Y. Lu, Y. Liu, D. Liu, S. Qiu, B. S. Ooi, I. S. Roqan, and Z. Ma, “Investigation of Ultrathin Surface Passivation Layers for GaN: A Comparative Analysis of Al2O3, SiO2, and SiNx in Reducing Surface Recombination”, Applied Physics Letters, 127, 011601 (2025). DOI: 10.1063/5.0262631.
  10. Y. Lu, J. Zhou, J. Gong, Y. Liu, X. Li, and Z. Ma, “High Rectification, low leakage Si/AlN heterojunction pn diode,” IEEE Electron Device Letters, 46, 7 (2025). DOI: 10.1109/LED.2025.3571348.
  11. J. Zhou†, D. Vincent†, S. Acharya†, S. Ojo†, Y. Liu†, Y. Guo, A. Abrand, J. Gong, D. Liu, S. Haessly, J. Shen, S. Xu, Y. Li, Y. Lu, H. Stanchu, L. Mawst, P. K. Mohseni, K. Sun, Z. Mi, Z. Ma, and S-. Q. Yu, “Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K,” Applied Physics Letters, 126, 092107 (2025). DOI: 10.1063/5.0241572. ✨Editor’s Pick [Preprint]
  12. H. Abbasi†, Y. Lu†, J. Zhou, D. Wang, K. Sun, P. Wang, J. Gong, D. Liu, Y. Liu, R. Singh, Z. Mi, and Z. Ma, “Si/AlN p-n heterojunction interfaced with ultrathin SiO2,” Applied Surface Science, 682, 161737 (2025). DOI: 10.1016/j.apsusc.2024.161737. [Preprint]

-2024

  1. Y. Lu, J. Zhou, V. Khandelwal, J. Gong, Y. Liu, T. K. Ng, X. Li, B. S. Ooi, Z. Ma, “Band Alignment Characterizations of Grafted GaAs/(-201) Ga2O3 Heterojunction via X-ray Photoelectron Spectroscopy,” Journal of Applied Physics, 136, 245301 (2024). DOI: 10.1063/5.0240115.
  2. J. Zhou, Q. Zhang, J. Gong, Y. Lu, Y. Liu, J. Gong, Y. Liu, H. Abbasi, H. Qiu, J. Kim, W. Lin, D. Kim, Y. Li, T. K. Ng, H. Jang, D. Liu, H. Wang, B. Ooi, and Z. Ma, “Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions,” arXiv:2411.09713 (2024).
  3. Y. Liu, J. Gong, S. Acharya, Y. Li, A. Abrand, J. Rudie, J. Zhou, Y. Lu, D. Vincent, S. Haessly, T.-H. Tsai, P. Mohseni, S.-Q. Yu, and Z. Ma, “Band alignment of grafted monocrystalline AlGaAs/GeSn p-i-n heterojunction determined by X-ray photoelectron spectroscopy”, Applied Surface Science, 685, 162006 (2024). DOI: 10.1016/j.apsusc.2024.162006. [Preprint]
  4. H. Abbasi, M. Sheikhi, D. Kim, R. Singh, J. Gong, J. Zhou, Q. Zhang, S. Qiu, C. Adamo, P. Marshall, C. Cheung, V. Gambin, and Z. Ma, “Highly Strained AlGaAs-GaAsP Nanomembranes-based High-performance Diode,” Advanced Materials Interfaces, 2400588 (2024). DOI: 10.1002/admi.202400588.
  5. H. Abbasi†, S. Lee†, H. Jung, N. Gajowski, Y. Lu, L. Wang, D. Kim, J. Zhou, J. Gong, C. Chae, J. Hwang, M. Muduli, S. Nookala, Z. Ma, S. Krishna, “Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction,” Applied Physics Letters, 125, 101107 (2024). DOI: 10.1063/5.0225069. [Preprint]
  6. J. Zhou†, J. Gong†, S. Lal, J. Kim, W. Lin, C. Chen, C. Li, Y. Dong, L. German, F. Xia, and Z. Ma, “Characteristics of native oxides-interfaced GaAs/Ge np diodes,” IEEE Electron Device Letters, 45, 9, (2024) DOI: 10.1109/LED.2024.3424461.
  7. J. Zhou, H. Wang, P. Huang, S. Xu, Y. Liu, J. Gong, J. Shen, D. Vincent, S. Haessly, A. Abrand, P. Mohseni, M. Kim, G. Chang, X. Gong, and Z. Ma, “GaAs/GeSn/Ge heterojunction p-i-n diode and light emitting diode formed via grafting,” J. Vac. Sci. Technol. B: Nanotechnol. Microelectron, 42, 4, (2024), DOI: 10.1116/6.0003619.
  8. J. Gong†, D. Kim†, H. Jang†, F. Alema†, Q. Wang, J. Zhou, Y. Li, T. K. Ng, S. Qiu, Q. Lin, S. Xie, M. Sheikhi, R. Singh, X. Su, H. N. Abbasi, K. Chabak, G. Jessen, C. Cheung, V. Gambin, S. S. Pasayat, A. Osinsky, B. S. Ooi, C. Gupta, and Z. Ma, “Characteristics of grafted monocrystalline Si/β-Ga2O3 p-n heterojunction,” Applied Physics Letters, (2024), 124, 262101. DOI: 10.1063/5.0208744. [Preprint]
  9. J. Zhou†, J. Gong†, M. Sheikhi†, A. Dheenan†, H. Abbasi, Y. Liu, C. Adamo, P. Marshall, N. Wriedt, C. Cheung, Y. Li, S. Qiu, X. Li, T. K. Ng, Q. Gan, V. Gambin, B. S. Ooi, S. Rajan, and Z. Ma, “Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 p-n heterojunction,” Applied Surface Science, 663, 160176, (2024). DOI: 10.1016/j.apsusc.2024.160176. [Preprint]
  10. J. Gong†, X. Su†, S. Qiu, J. Zhou, Y. Liu, Y. Li, D. Kim, T. Tsai, T. K. Ng, B. S. Ooi, and Z. Ma, “Effects of UV Ozone and O2 plasma surface treatments on the band bending of ultrathin ALD-Al2O3 coated Ga-polar GaN,” Journal of Applied Physics, 135, 115303 (2024). https://doi.org/10.1063/5.0188768
  11. J. Gong†, J. Zhou†, A. Dheenan, M. Sheikhi, F. Alema, T. Khee Ng, S. S. Pasayat, Q. Gan, A. Osinsky, V. Gambin, C. Gupta, S. Rajan, B. S. Ooi, and Z. Ma, “Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy,” Applied Surface Science, 665, 159615, (2024). https://doi.org/10.1016/j.apsusc.2024.159615. 🧩Equal contribution [Preprint]
  12. S. Xie†, M. Sheikhi†, S. Xu, M. T. Alam, Q. Lin, J. Zhou, L. Mawst, Z. Ma, and C. Gupta, “p-GaAs/n-Ga2O3 heterojunction diode with breakdown voltage of ~800V,” Applied Physics Letters, 124, 073503 (2024). https://doi.org/10.1063/5.0181056.
  13. S. Xie, Q. Lin, J. Gong, MD T. Alam, M. Sheikhi, J. Zhou, F. Alema, A. Osinsky, S. S. Pasayat, Z. Ma, and C. Gupta, “0.86 kV p-Si/(001)-Ga2O3 heterojunction diode,” IEEE Electron Device Letters, (2024). DOI: 10.1109/LED.2024.3352515.

-2023

  1. J. Zhou, A. Dheenan, J. Gong, C. Adamo, P. Marshall, M. Sheikhi, T.-H. Tsai, N. Wriedt, C. Cheung, S. Qiu, T. K. Ng, Q. Gan, G. Vincent, B. S. Ooi, S. Rajan, and Z. Ma, “Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions,” arXiv: 2308.06575v1 and arXiv: 2308.06575v2 (2023).
  2. S. Qiu†, J. Gong†, J. Zhou, T. K. Ng, R. Singh, M. Sheikhi, B. S. Ooi, and Z. Ma, “Interfacial band parameters of the ultrathin ALD-ZrO2 on the Ga-polar GaN through XPS measurements,” AIP Advances, 13, 055110 (2023). DOI: 10.1063/5.0145286. ✨Editor’s Pick
  3. J. Gong†, J. Zhou†, P. Wang†, T.-H. Kim, K. Lu, S. Min, R. Singh, M. Sheikhi, H. N. Abbasi, D. Vincent, D. Wang, N. Campbell, T. Grotjohn, M. Rzchowski, J. Kim, E. T. Yu, Z. Mi, and Z. Ma, “Synthesis and Characteristics of Transferrable Single-Crystalline AlN Nanomembranes,” Advanced Electronic Materials, 2201309 (2023). DOI: 10.1002/aelm.202201309. 🧩Equal contribution

-2022

  1. J. Kim†, J. Gong†, W. Lin†, S. Lal, X. Su, D. Vincent, S. Cho, J. Zhou, S. Min, D. Kim, and Z. Ma, “Low contact-resistivity and high-uniformity Ni/Au Ohmic contacts on p+ Si nanomembranes via low-temperature rapid thermal annealing,” Materials Science for Semiconductor Processing, 151, 106988 (2022). DOI: 10.1016/j.mssp.2022.106988.
  2. J. Gong, Z. Zheng, D. Vincent, J. Zhou, J. Kim, D. Kim, T. K. Ng, B. S. Ooi, K. J. Chen, and Z. Ma, “Interfacial band parameters of ultrathin ALD-Al2O3, ALD-HfO2, and PEALD-AlN/ALD-Al2O3 on c-plane, Ga-face GaN through XPS measurements,” Journal of Applied Physics, 132, 135302 (2022). DOI: 10.1063/5.0106485.
  3. T.-L. Liu, Y. Dong, S. Chen, J. Zhou, Z. Ma, and J. Li, “Battery-free, tuning circuit inspired wireless sensor systems for detection of multiple biomarkers in bodily fluids,” Science Advances, 8, eabo7049 (2022). DOI: 10.1126/sciadv.abo7049.
  4. J. Gong, K. Lu, J. Kim, T. K. Ng, D. Kim, J. Zhou, D. Liu, J. Kim, B. S. Ooi, and Z. Ma, “Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN,” Japanese Journal of Applied Physics, 61, 011003 (2022). DOI: 10.35848/1347-4065/ac3d45. [Preprint]

-Before 2022 (On Nanophotonics and Semiconductor Lasers)

  1. T. Zhou, J. Zhou, Y. Cui, X. Liu, J. Li, K. He, X. Fang, and Z. Zhang, “Microscale local strain gauges based on visible microdisk lasers embedded in a flexible substrate,” Optics Express, 26, 16797-16804 (2018). DOI: 10.1364/OE.26.016797.
  2. J. Zhou, T. Zhou, J. Li, K. He, Z. Qiu, B. Qiu, and Z. Zhang, “Proposal and numerical study of a flexible visible photonic crystal defect cavity for nanoscale strain sensors,” Optics Express, 25, 23645-23653 (2017). DOI: 10.1364/OE.25.023645.
  3. T. Zhou, J. Li, J. Zhou, K. He, Z. Qiu, B. Qiu, and Z. Zhang, “Two-dimensional five-fold photonic crystal microcavity,” Journal of Nanophotonics, 11(4), 046013 (2017). DOI: 10.1117/1.JNP.11.046013.
  4. J. Zhou, F. Shi, T. Zhou, K. He, B. Qiu, and Z. Zhang, “Characteristic analysis and comparison of two kinds of hybrid plasmonic annular resonators,” Journal of Nanophotonics, 11(2), 026006 (2017). DOI: 10.1117/1.JNP.11.026006.

Conference and Workshop Presentations

  1. J. Zhou, D. Vincent, S. Acharya, S. Ojo, Y. Liu, Y. Guo, A. Abrand, J. Gong, D. Liu, S. Haessly, J. Shen, S. Xu, Y. Li, Y. Lu, H. Stanchu, L. Mawst, P. K. Mohseni, K. Sun, Z. Mi, Z. Ma, and S-. Q. Yu, “Grafted AlGaAs/GeSn lasers,” 8th Tri-Service Workshop on GeSn and GeSiSn, Dayton, OH, Sept 22-23, 2025. (Oral)
  2. Y. Liu, Y. Li, T. Tsai, S. Acharya, Y. Lu, S. Haessly, D. Vincent, S. Q. Yu, N. Dissanayake, J. Zhou, E. K. Huang, J. Gong, and Z. Ma, “Grafted Si/Ge0.89Sn0.11 heterojunction for buffer-free GeSn/Si separate absorption, charge and multiplication avalanche photodiode application,” 8th Tri-Service Workshop on GeSn and GeSiSn, Dayton, OH, Sept 22-23, 2025. (Poster)
  3. S. Xie, M. T. Alam, J. Gong, Q. Lin, M. Sheikhi, J. Zhou, F. Alema, A. Osinsky, S. Pasayat, Z. Ma, and C. Gupta, “Understanding the breakdown-field capability of narrow band gap (p-Si)/ultra-wide band gap (n-Ga2O3) heterojunction p-n diode,” Electronic Materials Conference (EMC), College Park, MD, June 26-28, 2024. 
  4. S. Xie, M. Sheikhi, S. Xu, M. T. Alam, J. Zhou, L. Mawst, Z. Ma, and C. Gupta, “p-GaAsn-Ga2O3 heterojunction diode with breakdown voltage of ~800V,” Electronic Materials Conference (EMC), College Park, MD, June 26-28, 2024. (Oral)
  5. S. Cho, J. Kim, D. Liu, J. Zhou, J. Gong, D. Kim, M. Sheikhi, H. Jang, H. Abbasi, Y. Liu, Y. Lu, S. S Pasayat, C. Gupta, et al., and Z. Ma, “Attempts on WBG and UWBG semiconductor bipolar devices,” Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Charleston, SC, March 18-21, 2024. (Oral)
  6. S. Min, R. Singh, P. Wang, D. Wang, J. Gong, H. S. Abbasi, J. Zhou, D. Vincent, M. Sheikhi, N. Campbell, J. Zhu, Y. Liu, T. Grotjohn, M. Rzchowski, Z. Mi, and Z. Ma, “Polarization-induced two-dimensional hole-gas (2DHG) in grafted N-polar/Ga-polar AlN/GaN heterostructures,” Government Microcircuit Applications and Critical Technology Conference (GOMACTech), San Diego, CA, March 20-23, 2023.
  7. V. Gambin, C. Cheung, A. Oki, D. Kim, J. Gong, Q. Zhang, H. N. Abbasi, H. Jang, J. Zhou, D. Vincent, and Z. Ma “Heterogeneous heterostructure transfer bipolar transistor,” Government Microcircuit Applications and Critical Technology Conference (GOMACTech), San Diego, CA, March 20-23, 2023.
  8. E. Huang, D. Vincent, S. Haessly, J. Zhou, J. Shen, J. Gong, and Z. Ma, “eSWIR GeSn APD Development,”6th Tri-Service Workshop on GeSn and GeSiSn, Colorado Springs, CO, October 25-26, 2023.
  9. Y. Liu†, J. Zhou†, D. Vincent, J. Gong, S. Haessly, Y. Li, Q. Zhang, S.-Q. Yu, and Z. Ma, “Grafted AlGaAs/GeSn p-i-n Heterojunction for GeSn MIR electrically pumped laser application,” 37th North American Conference on Molecular Beam Epitaxy (NAMEB 2023), Madison, WI, September 17-20, 2023. (Poster)
  10. J. Zhou, D. H. Kim, H. Jang, Q. Lin, J. Gong, F. Alema, A. Osinsky, K. Chabak, G. Jessen, S. S. Pasayat, C. Cheung, V. Gambin, C. Gupta, and Z. Ma, “Si/Ga2O3 and GaAsP/Ga2O3 P-N Diodes via semiconductor grafting,” The 6th U.S. Gallium Oxide Workshop (GOX), Buffalo, NY, August 13-16, 2023. (Poster)
  11. D. Vincent, S. Haessly, J. Zhou, J. Shen, J. Gong, E. Huang, F. S. Yu, and Z. Ma, “Fabrication and Characterization of Grafted Si/GeSn Heterojunction Diodes Toward APD Applications,” 5th Tri-Service Workshop on GeSn and GeSiSn, Dayton, OH, January 10-11, 2023.
  12. D. Vincent, J. Zhou, S. Ojo, S. Acharya, S. Haessly, A. Abrand, J. Shen, S. Xu, L. Mawst, B. Clafin, P. K. Mohseni, Z. Ma, and F. S. Yu, “Optically Pumped Laser Using AlGaAs Nanomembranes,” 5th Tri-Service Workshop on GeSn and GeSiSn, Dayton, OH, January 10-11, 2023.
  13. J. Zhou, H. Wang, P. R. Huang, J. Shen, D. Vincent, S. Haessly, S. Xu, A. Abrand, P. K. Mohseni, M. Kim, X. Gong, G. E. Chang, and Z. Ma, “Grafted GaAs/GeSn N-I-P Diodes and Photodiodes,” 5th Tri-Service Workshop on GeSn and GeSiSn, Dayton, OH, January 10-11, 2023.
  14. J. Zhou, P. Wang, D. Wang, T. Ng, H. Wang, S. Xu, S. Ojo, Y.-C. Huang, Z. Mi, B. S. Ooi, X. Gong, S.-Q. Yu, T. Grotjohn, and Z. Ma, “Grafted Si/GaN, AlN/Si and GaAs/GeSn PN Junctions with Epitaxy-Like Interface Qualities,” 36th North American Molecular Beam Epitaxy Conference (NAMBE), Rehoboth Beach, DE, September 18-21, 2022. (Oral)
  15. J. Zhou, J. Gong, P. Wang, D. Vincent, S. Min, D. Wang, Z. Mi, and Z. Ma, “Freestanding Single-Crystalline AlN Nanomembrane,” Workshop on Advanced Epitaxy for Freestanding Membranes and 2D Materials, Cambridge, MA, July 06-08, 2022. (Poster)
  16. J. Gong, J. Kim, T. K. Ng, K. Lu, D. Kim, J. Zhou, D. Liu, J. Kim, B. S. Ooi, and Z. Ma, “Surface band-bending modulation of Ga-face GaN through ALD oxides,” IEEE Semiconductor Interface Specialists Conference, San Diego, CA, December 8-11, 2021. (Poster)
  17. J. Zhou, F. Shi, T. Zhou, K. He, B. Qiu, and Z. Zhang, “Characteristic analysis and comparison of two kinds of hybrid plasmonic annular resonators,” CLEO Pacific Rim, Singapore, July 31 to August 4, 2017. (Poster)
  18. J. Zhou, T. Zhou, J. Li, K. He, and Z. Zhang, “Flexible hybrid microdisk cavity for lasing,” Frontiers in Optics, Washington D.C., USA, September 16-20, 2017. (Poster)
  19. J. Zhou, T. Zhou, J. Li, K. He, and Z. Zhang, “Flexible visible photonic crystal laser cavity,” OSA Laser Congress, Aichi, Japan, October 1-5, 2017. (Poster)
  20. T. Zhou, J. Zhou, Y. Cui, X. Liu, Z. Zhang, “Nanoscale strain gauges composed of microdisk lasers embedded in a flexible substrate,” CLEO Pacific Rim, Hong Kong. July 29 to August 03, 2018. (Oral)
  21. J. Zhou, T. Zhou, J. Li, K. He, and Z. Zhang. “Flexible visible photonic crystal laser,” CLEO Europe, Munich, Germany, June 23-27, 2017. (Oral)