Current Programs

(I) UTD-KMU In-Fusion : Multifunctional Flexible Electronics

(II) NRF-HYU : Advanced characterization on multi-level metal monolayer architecture materials

(III) KEIT-COSAR (Samsung, SK Hynix) : CMOS extension technology using III-V channel

(IV) KEIT-TES : Epitaxial structure design and epitaxial growth system for high-voltage power semiconductors

 

 

(I) In-Fusion: Multifunctional Flexible Electronics

A. Research Goal

Kookmin University, Korea and In-Fusion center, UT Dallas, U.S. aim at
1. Tech Commercialization: Develop a flexible multifunctional electronics technology for commercialization

  • Development of radiation detector system
  • Partnership Industry
  • Development of prototype
  • Multifunctional device

2. R&D Hub: Construct a global R&D hub for flexible multifunctional electronics

  • Building a networking hub in TMD/2D research community (Hosting annual symposiums, Seeking funding opportunities)
  • Joint research with UTD (Provide simulation techniques, Provice experimental samples)

B. Sponsors and Participating Institutes

  • Sponsors : NRF, Kookmin University
  • Participating Institute : UT-Dallas, KMU

C. Projects

(1) Nanoparticle-based Scintillator

kmu-2

(2) Large, Flexible, Low power Neutron Detectors
kmu-4
(3) Fabrication of Electronic Devices, X-ray Scintillator/ Detector Characterization
kmu-1

D. Key Achievement

[Infrastructure]

  • Graphene CVD, Thermal Evaporator, E-beam Evaporator, Photo Lithography, Spin Coater/ Wet Station
  • Photodetector measurement system
  • X-ray detection imaging quality evaluation (with Dr Tech)
    *These facilities set up at the fab of Kookmin University, Korea.

[Research networking hub]

  • Co-hosting of International Materials Research Congress (IMRC) Soft chemistry symposium
  • Co-organizer (Prof. M. Quevedo, UT Dallas, Prof. M. Lee and Prof. D. Ahn, KMU, etc), August 16-20, 2015/ Cancun, Mexico
  • Academic Collaboration with regularly having workshops

[Funding-developing efforts] – Co proposal submitted

[Collaborative research works]

  • Building joint research platform
  • Materials characterization, device fabrication and theoretical study (UTD)
  • Materials synthesis and mesoscopic simulation support (KMU)

 

 

(II) Advanced characterization on multi-level metal monolayer architecture materials

A. Research Goal

Main research theme is ‘Development of metal-semiconductor transition materials with multi-level conductivity’, and it is divided four sub-reserach subjects;
(i) Fabrication and characterization of multi-level metal-monolayer architecture materials, (ii) Advanced Characterization on multi-level metal monolayer architecture materials, (iii) Design and application study of multi-level logic materials and devices, and (iiii) First-principles electronic structure calculation study of organic-metal single layered structure.
This research project is financially supported by the Creative Materials Discovery Project, National Research Foundation of Korea.

B. Sponsors and Participating Institutes

  • Sponsor: NRF (Nationational Research Foundation, Korea)
  • Participating Institutes : HanYang University (HYU), Gwangju Institute of Science and Technology (GIST)

C. Research Activities

(1) Concept of Multi-level materials and device

 

(2) Prof. Jiyoung Kim, co-dicrector of In-FUSUION center,  mainly conducts a sub theme; (ii) Advanced Characterization on multi-level metal monolayer architecture materials.

In-Situ materials and electrical characterization (Large scale/ high speed characterization)

 

(3) Prof. Kyeongjae Cho, a member of In-FUSION center, focuses on a sub-theme; (iiii) First-principles electronic structure calculation study of organic-metal single layered structure.

Exmaple of calculation of BDT – W organic – metal single layered structure

 

 

(III) Development of CMOS extension technology using III-V channel

A. Research Goal

This project aims to evaluate III-V channel materials for extension of CMOS technology beyond 10 nm node. Particularly, University shall focus on physical/ chemical characterization of III-V channel and its modeling.

B. Sponsors and Participating Institutes

  • Sponsor: KEIT (Korea Evaluation Institute of Industrial Technology, Korea), COSAR (Consortium of Semiconductor Advanced Research, Korea), Samsung and SK Hynix
  • Participating Institutes : Yonsei University, SEMATECH

C. Research Scopes

UT Dallas will investigate electrical/materials characteristics of III-V channel in InGaAs MOS capacitors and metal-oxide-semiconductor field-effect transistors (MOSFETs). Electrical/material model will be explored along with novel characterization techniques, such as in-situ XPS study on ALD and in-situ electrical characterization, etc.

In the first year, the methods of the modeling, design, fabrication using InGaAs MOS structures will be developed for high performance next generation devices. Electrical measurements and material analysis will be used for the evaluation of the fabricated device. In the second year, effects of interface between high-k and In0.53Ga0.47As channel substrates with DEZ and plasma treatment will be investigated using electrical and materials characterization. We will also investigate characterization of planar MOS devices to identify interfacial traps and origins of defects. In the third year, the fabrication and characterization of In0.53Ga0.47As MOSFETs with high-k gate insulator will be demonstrated. We will also estimate the mobility of InGaAs MOSFETs for various surface treatment including DEZ and plasma treatment developed at last year. In the fourth year, the effects of the interface between a high-k HfxZr1-xO2 and an In0.53Ga0.47As substrate with DEZ-H2O surface treatment will be investigated using electrical and material characterizations. Inversion type n- and p-channel InGaAs MOSFETs will be fabricated and characterized for high mobility devices. We will also investigate the characterization of planar MOS devices to identify interfacial traps and origins of defects for (100), (110), and (111) direction substrates.

 

 

(IV) Development of epitaxial structure design and epitaxial growth system for high-voltage power semiconductors

A. Research Goal

The goal of this global R&D project is to design and develop new-concept epitaxial growth systems and material structures for next-generation high-power switching and RF devices based on GaN on Si technology. The primary objective of this project is to develop a proto-type commercial metalorganic chemical deposition (MOCVD) system that is specially designed for the epitaxial growth of GaN on Si substrates, AlGaInN/ GaN heterostructures, and high-quality (in terms of both crystallinity and electronic characteristics) buffer layers. In particular, the new MOCVD system to be developed is differentiated from currently available commercial systems originally designed for photonic materials by: dedicated engineering design for the epitaxial growth of high quality GaN on Si substrates, handling capacity of multiple, large-scale wafers with 6- and 8-inch diameter (eventually expanded to > 12-inch diameter), and low-maintenance and high-throughput reactor chamber and exhaust units. In addition, this program will study and explore epitaxial structures including a Schottky barrier, a channel layer, and strain-managed low-leakage buffer layers by employing MOCVD, PVD and atomic-layer epitaxy (ALD) for the development of next-generation high-power high-voltage RF devices in conjunction with the development of new-concept equipment.

This three-year-long R&D program supported by the IT R&D program of MOTIE (the Ministry of Trade, Industry and Energy)/ KEIT (Korea Evaluation Institute of Technology), in Korea. This program will financially support the development of manufacturing tools and materials for GaN on Si by a mid-size equipment company (TES) via global R&D collaboration.

B. Sponsors and Participating Institutes

  • Sponsor: KEIT (Korea Evaluation Institute of Industrial Technology, Korea), TES
  • Participating Institutes : TES, UT-Dallas, QORVO, University of Houston

C. Research Activities

UT Dallas will (i) investigate test devices for electrical and reliability of GaN on Si including surface leakage current, breakdown voltage, current collapse, (ii) compare the quality of TES wafer quality with the quality of other commercial wafers, (iii) investigate surface treatment and ALD type epitaxial growth. The new MOCVD system to be developed is differentiated from currently available commercial systems originally designed for photonic materials by: dedicated engineering design for the epitaxial growth of high quality GaN on Si substrates, handling capacity of multiple, large-scale wafers with 6- and 8-inch diameter (eventually expanded to > 12-inch diameter), and low-maintenance and high-throughput reactor chamber and exhaust units. In addition, this program will study and explore epitaxial structures including a Schottky barrier, a channel layer, and strain-managed low-leakage buffer layers by employing MOCVD, PVD and atomic-layer epitaxy (ALD) for the development of next-generation high-power high-voltage RF devices in conjunction with the development of new-concept equipment.